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C4574 IS45S 911ATE 94HAC16T BA4584RF MAX3160 S40HC1R5 SR2N7
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  0.16 0.25a Datasheet PDF File

For 0.16 0.25a Found Datasheets File :: 6684    Search Time::2.766ms    
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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...wer dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch ...16 C, Capacitance (pF) 600 C oss 12 400 Ciss 8 200 Crss 4 0 1 10 10...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de...16 110 65 46 82 14 42 2400 850 400 5.0 MAX -4 -25 -250 100 0.150 24 160 100 70 120 - UNITS V V...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ... N N E L M O S F E T RDS(on) 0.10 0.25 T o p V iew Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 ...16 1.7 N-Channel Maximum P-Channel 30 20 -2.3 -1.8 -10 -1.3 2.0 1.3 57 -1.3 0.25 Units V...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ...V 3 4 6 5 RDS(on) = 0.25 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn...16 1.2 54 62 V ns nC --- 0.82 --- 27 --- 31 Conditions D MOSFET symbol showing the integral rever...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ... 3 6 4 5 RDS(on) = 0.10 T o p V iew Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 De...16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Cu...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    LP621024D LP621024D-55LL LP621024D-70LL LP621024DM-55LL LP621024DM-70LL LP621024DV-55LL LP621024DV-70LL LP621024DX-55LL

AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
Part No. LP621024D LP621024D-55LL LP621024D-70LL LP621024DM-55LL LP621024DM-70LL LP621024DV-55LL LP621024DV-70LL LP621024DX-55LL LP621024DX-70LL
OCR Text ...DX) (August, 2001, Version 1.0) LP621024D 17 32 2 A9 18 A2 3 A8 19 A1 4 A13 20 A0 5 WE 21 I/O1 6 CE2 22 I/O2 7...16 A4 32 OE A11 17 A3 1 AMIC Technology, Inc. LP621024D Series Block Diagram A0 VCC GN...
Description 128K X 8 BIT CMOS SRAM 128K的8位CMOS的SRAM

File Size 182.65K  /  16 Page

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    MUR1605CT MUR1610CT MUR1620CT

Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Part No. MUR1605CT MUR1610CT MUR1620CT
OCR Text ....65 2.54 5.84 9.65 --12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92 ...16 Instantaneous Reverse Leakage Current - MicroAmperes versus Percent Of Rated Peak Reverse Volt...
Description 16 Amp Super Fast Glass Pass ivated Rectifier 50 to 200 Volts

File Size 57.17K  /  2 Page

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...e Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 C 1) VCE 1200V IC 25A Eoff 2.9mJ Tj 150C ...16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconducto...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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    2SC4054

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4054
OCR Text ...12minute kV Mounting Torque TOR 0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Item Symbol Conditions Ratings Unit Collector to Emitter Sust...16 *Z/W Transition Frequency fT V = 10V, 0.5A = STD 20 MHz CE C I Turn on Time ton I = 2.5A Max 0.5 ...
Description Switching Power Transistor(5A NPN)

File Size 360.85K  /  12 Page

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    2SJ339

Sanyo Semicon Device
Toshiba Semiconductor
Part No. 2SJ339
OCR Text ...ns unit:mm 2063A [2SJ339] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Volt...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 39.40K  /  4 Page

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