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  0.25v v Datasheet PDF File

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    2SA2087

ROHM[Rohm]
Part No. 2SA2087
OCR Text ...ns (Unit : mm) ATv 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) Emitter (2) Collector (3) Base 1.05 14.5 ...25v Collector-emitter saturation voltage DC current gain vCE (sat) hFE - 120 - -200 - ...
Description Power transistor

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    2SA2088

ROHM[Rohm]
Part No. 2SA2088
OCR Text 0.5A) 2SA2088 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = -500mA) 2) Low saturation voltage, typically (Typ. : -150mv at ...25v Collector-emitter saturation voltage DC current gain vCE (sat) hFE - 120 - -150 - ...
Description Medium power transistor ( 60v/0.5A)
Medium power transistor (−60v, −0.5A)
Medium power transistor (-60v, -0.5A)

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    2SA2091S 2SA2091STPQ

TE Connectivity, Ltd.
ROHM[Rohm]
Part No. 2SA2091S 2SA2091STPQ
OCR Text ...pically (Typ. : -200mv at IC = -0.5A, IB = -50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5...25v Collector-emitter saturation voltage DC current gain vCE (sat) hFE - 120 - -200 - ...
Description 1000 mA, 60 v, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60v/ 1A)
Medium power transistor (−60v, −1A)
Medium power transistor (-60v, -1A)

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    2SA2093

ROHM[Rohm]
Part No. 2SA2093
OCR Text .... : -200mv at IC = -1.0A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5880 !Externa...25v Collector-emitter saturation voltage DC current gain vCE (sat) hFE - 120 - -200 - ...
Description Power transistor ( 60v/2A)
Power transistor (−60v, −2A)
Power transistor (-60v, -2A)

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    2SA2113

ROHM[Rohm]
Part No. 2SA2113
OCR Text ...yp. : -200mv at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 !Externa...25v 2 Fall time 1 Non repetitive pulse 2 See switching characteristics measurement circuit 1 ...
Description Medium power transistor ( 30v/2A)
Medium power transistor (−30v, −2A)
Medium power transistor (-30v, -2A)

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    2SB779

PANASONIC[Panasonic Semiconductor]
Part No. 2SB779
OCR Text ...mm s Features q q q 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 0.650.15 2 1.1 -0.1 Parameter Collector to base voltage ...25v, IE = 0 vCE = -20v, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 vCE = -2v, IC =...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

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    2SB790 2SD969

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SB790 2SD969
OCR Text ...tary to 2SD969 6.90.1 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q 1.5 0.4 1.5 R0.9 R0.9 Low collector to ...25v, IE = 0 vCE = -20v, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IC = -10A, IC = 0 vCE = -2v, IC =...
Description Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)

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    2SD1198 2SD1198A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1198 2SD1198A
OCR Text ...fication Unit: mm 6.90.1 1.5 0.4 s Features q 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 q q 0.85 (Ta=25C) Ratings 30 60 25 50...25v, IE = 0 vCB = 45v, IE = 0 vEB = 4v, IC = 0 IC = 100A, IB = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 ...
Description Silicon NPN epitaxial planer type darlington 1000 mA, 25 v, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SD1205 2SD1205A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1205 2SD1205A
OCR Text 0.4 Unit: mm 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q 1.5 1.5 R0.9 R0.9 q 0.85 0.550.1 0.450.05 1.250....25v, IE = 0 vEB = 4v, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 vCE = 10v, IC = 50...
Description Silicon NPN epitaxial planer type darlington(For low-frequency amplification) 500 mA, 50 v, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text ...h=25C Min. 800 3,5 Typ. 4,0 10 0,2 10 3,19 2 450 75 40 20 40 50 25 1,0 450 3 Max. 4,5 500 1,0 100 4,0 4 Unit v v A mA nA S p...25v; Tch=25C ID [A] RDS(ON) [] 2 ID [A] 1 3 vDS [v] Tch [C] vG...
Description N-channel MOS-FET

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