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  1-30a Datasheet PDF File

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    2SD958

PANASONIC[Panasonic Semiconductor]
Part No. 2SD958
OCR Text ...n Complementary to 2SB788 6.90.1 0.4 Unit: mm 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 1.5 R0.9 R0.9 0...30A 12 25A 8 20A 15A 4 10A 5A 200 100 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 ...
Description Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

File Size 36.40K  /  2 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text 1 3 Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 D3 15 10 Q6 D6 Q5 D5 16 IGBT SIP MODULE Features * Short Circuit Rated UltraFast: Optimized for hi...30A I F = 30A 60 I IR R M - (A ) t rr - (ns) 10 IF = 15 A I F = 15A 40 I F = 5...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ... M3 srew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C ...30A 43A RG VV 2 0GS D .U .T IA S tp + V - DD 300 A 0 .0 1 200 Fig 12a. Unc...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... M3 srew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C ...30A 43A RG VV 2 0GS D .U .T IA S tp + V - DD 300 A 0 .0 1 200 Fig 12a. Unc...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ... M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C ...30A 43A 400 RG VGS 20V D .U .T IA S tp 0 .0 1 + - VD D A 300 Fig 12a. Unclamp...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ... M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C ...30A 43A 400 RG VGS 20V D .U .T IA S tp 0 .0 1 + - VD D A 300 Fig 12a. Unclamp...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ... Max. 30 20 90 57 360 120 3.1 0.96 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to...30A --- 27 41 ID = 15A --- 6.7 --- nC VDS = 16V --- 9.7 --- VGS = 5.0V --- 22 --- VGS = 0V, VDS = 1...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ... Max. 20 20 110 69 440 120 3.1 0.96 -55 to + 150 Units V V A W W W/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-...30A 44 ID = 15A --- nC VDS = 10V --- VGS = 4.5V --- VGS = 0V, VDS = 10V --- VDD = 10V --- ID = 30A n...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    MAX800 MAX800L MAX800LCPE MAX800LCSE MAX800LEPE MAX800LESE MAX800M MAX800MCPE MAX800MCSE MAX800MEPE MAX800MESE MAX691 MA

Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX800 MAX800L MAX800LCPE MAX800LCSE MAX800LEPE MAX800LESE MAX800M MAX800MCPE MAX800MCSE MAX800MEPE MAX800MESE MAX691 MAX691A MAX691AC MAX691ACPE MAX691ACSE MAX691ACWE MAX691AD MAX691AEJE MAX691AEPE MAX691AESE MAX691AEWE MAX691AMJE MAX693A MAX693AC MAX693ACPE MAX693ACSE MAX693ACWE MAX693AD MAX693AEJE MAX693AEPE MAX693AESE MAX693AEWE MAX693AMJE
OCR Text 19-0094; Rev 7a; 12/96 Microprocessor Supervisory Circuits _______________General Description The MAX691A/MAX693A/MAX800L/MAX800M micro...30A supply current, 200ms typ reset active delay on power-up, and 6ns chipenable propagation delay. ...
Description Microprocessor Supervisory Circuits
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:800V; Current, It av:500A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes

File Size 155.34K  /  16 Page

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