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  1.29a Datasheet PDF File

For 1.29a Found Datasheets File :: 428    Search Time::1.625ms    
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    IRF[International Rectifier]
Part No. IRL3202S
OCR Text ...70 29 6.9 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V mJ A mJ V/ns C Thermal Resistance Parameter RqJC RqJA Junction-...29A W 0.016 VGS = 7.0V, ID = 29A --- V VDS = VGS, ID = 250A --- S VDS = 16V, ID = 29A 25 VDS = 20V...
Description HEXFET Power MOSFET

File Size 93.76K  /  8 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT8024JLL_04 APT8024JLL APT8024JLL04
OCR Text ... TC = 25C Pulsed Drain Current 1 SO 2 T- 27 "UL Recognized" ISOTOP (R) * Increased Power Dissipation * Easier To Drive * ...29A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 29A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 161.53K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT8024JFLL
OCR Text ... TC = 25C Pulsed Drain Current 1 SO 2 T- 27 "UL Recognized" ISOTOP (R) * Increased Power Dissipation * Easier To Drive * ...29A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 29A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 236.39K  /  5 Page

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    IRFZ44EL IRFZ44ES

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44EL IRFZ44ES
OCR Text ...220 29 11 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJ...29A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 29A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VG...
Description MOV 250V RMS 17MM HIGH ENERGY 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 0.023ohm,身份证\u003d 48A条)
(IRFZ44ES / IRFZ44L) Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

File Size 159.31K  /  10 Page

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    IRFZ44E IRFZ44EPBF

IRF[International Rectifier]
Part No. IRFZ44E IRFZ44EPBF
OCR Text ...220 29 11 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJ...29A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 29A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VG...
Description 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

File Size 94.75K  /  8 Page

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    HUFA76419P3 HUFA76419S3S HUFA76419S3ST

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76419P3 HUFA76419S3S HUFA76419S3ST
OCR Text ... Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate V...29A, VGS = 10V (Figures 9, 10) ID = 19A, VGS = 5V (Figure 9) ID = 18A, VGS = 4.5V (Figure 9) THERMAL...
Description 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs

File Size 212.40K  /  10 Page

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    IRFZ44ESPBF

International Rectifier
Part No. IRFZ44ESPBF
OCR Text ...emperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) absolute maximum ratings parameter ...29a, v gs = 0v t rr reverse recovery time ??? 69 104 ns t j = 25c, i f = 29a q rr reverse reco...
Description Advanced Process Technology

File Size 234.15K  /  11 Page

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    IRL2910 L2910

International Rectifier
Part No. IRL2910 L2910
OCR Text ... M3 srew Max. 55 39 190 200 1.3 16 520 29 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/n...29A 0.030 VGS = 5.0V, ID = 29A 0.040 VGS = 4.0V, ID = 24A 2.0 V VDS = VGS, ID = 250A --- S VDS =...
Description RES THICK FILM POWER 10 OHM 5W
HEXFET Power MOSFET

File Size 120.70K  /  8 Page

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For 1.29a Found Datasheets File :: 428    Search Time::1.625ms    
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