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NXP Semiconductors N.V.
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| Part No. |
PSMN016-100BS
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| OCR Text |
... data psmn016-100bs n-channel 100v 16 m ? standard level mosfet in d2pak rev. 1 ? 25 october 2011 objective data sheet d2pak table 1. qui...ms dc 10 ms 100 ms limit r dson = v ds / i d
psmn016-100bs all information provided in this docu... |
| Description |
N-channel 100v 16 m standard level MOSFET in D2PAK
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| File Size |
196.38K /
14 Page |
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IXYS
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| Part No. |
DSEK60-02A DSEK60-02AR
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| OCR Text |
...sek 60, 200v t vj = 100c v r = 100v t vj = 100c i f = 35a fig. 3 typ. peak reverse current i rm versus -di f /dt fig. 2 typ. reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj =100c t vj = 25c t v... |
| Description |
Fast Recovery Diodes
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| File Size |
99.02K /
2 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN9R5-100XS
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| OCR Text |
... data psmn9r5-100xs n-channel 100v 9.6 m ? standard level mosfet in to220f (sot186a) rev. 2 ? 20 october 2011 preliminary data sheet to-...ms) i al (a) (1) (2) 003aag591 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 10 3 v ds ... |
| Description |
N-channel 100v 9.6 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
213.55K /
15 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN7R0-100XS
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| OCR Text |
... data psmn7r0-100xs n-channel 100v 6.8 m ? standard level mosfet in to220f (sot186a) rev. 2 ? 21 october 2011 preliminary data sheet to-...ms) i al (a) (1) (2) 003aag575 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 10 3 v ds ... |
| Description |
N-channel 100v 6.8 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
211.16K /
15 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN5R6-100XS
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| OCR Text |
... data psmn5r6-100xs n-channel 100v 5.6 m ? standard level mosfet in to220f (sot186a) rev. 2 ? 26 september 2011 preliminary data sheet t...ms) i al (a) (1) (2) 003aag560 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 10 3 v ds ... |
| Description |
N-channel 100v 5.6 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
214.41K /
15 Page |
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it Online |
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SEME-LAB[Seme LAB]
Semelab(Magnatec)
TT electronics Semelab Limited
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| Part No. |
BDS12IG BDS10IG BDS11IG
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| OCR Text |
... 80V 80V 5V 15A 5A 90W
BDS12 100v 100v
-65 TO 200C 200C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:...ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS
Parameter
ton ts tr On Time Storage Time Fall T... |
| Description |
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN澶?欢????朵?绠?TO257???灏??))
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN外延型硅晶体TO257金属封装)) 硅npn型Epitiaxial基地晶体TO257金属包（npn型外延型硅晶体管TO257金属封装））
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| File Size |
14.52K /
2 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN027-100XS
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| OCR Text |
... data psmn027-100xs n-channel 100v 26.8 m ? standard level mosfet in to220f (sot186a) rev. 1 ? 26 september 2011 preliminary data sheet ...ms) i al (a) (1) (2) 003aag630 10 -1 1 10 10 2 10 3 1 10 10 2 10 3 v ds (v) i ... |
| Description |
N-channel 100v 26.8 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
212.93K /
15 Page |
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it Online |
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