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  101a Datasheet PDF File

For 101a Found Datasheets File :: 62089    Search Time::1.578ms    
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    2SA2013 2SC5566

SANYO[Sanyo Semicon Device]
Part No. 2SA2013 2SC5566
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52501TS KT TA-3260 No.6307-1/5 2SA2013/2SC5566 Continued on preceding page. Parameter Symbol Conditions IC=(-)1A, IB=(-)50mA Collector-to-Emitter Satur...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2022 2SC5610

Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Part No. 2SA2022 2SC5610
OCR Text ...it:mm 2041A [2SA2022/2SC5610] 10.0 3.2 3.5 7.2 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to...1A VCE=(-)10V, IC=(-)500mA VCB=(-)10V, f=1MHz 150 (290) 330 (50)28 Conditions Ratings min typ max (-...
Description NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-220ML
From old datasheet system

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    2SA2023 2SC5611

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2023 2SC5611
OCR Text ...er SANYO : TO126ML Tc=25C 10 150 -55 to +150 C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emit...1A VCE=(-)5V, IC=(-)1A IC=(-)2.5A, IB=(-)0.125A 110 100 (-)0.4 Conditions Ratings min typ max (-)0.1...
Description 60V / 5A High-Speed Switching Applications 0V / 5A条高速开关应
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications

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    2SA2031 2SC5669

SANYO[Sanyo Semicon Device]
Formosa MS
Sanyo Electric Co.,Ltd.
Part No. 2SA2031 2SC5669
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61500 TS IM TA-2927 No.6586-1/4 2SA2031 / 2SC5669 Co...1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(-)7.5A IC=(--)7.5A, IB=(--)0.75A IC=(--)5mA, IE=0 IC=(--)50mA...
Description NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications
PNP Epitaxial Planar Silicon Transistor 230V / 15A, AF100W Output Applications
230V / 15A/ AF100W Output Applications

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    2SA2037 2SC5694

SANYO[Sanyo Semicon Device]
Part No. 2SA2037 2SC5694
OCR Text ...ings (-50)60 (-)50 (-)6 (-)7 (-)10 (-)1.2 1.2 10 150 -55 to +150 Unit V V V A A A W W C C Any and all SANYO products described or contain...1A VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz IC=(--)2.5A, IB=(-)125mA IC=(--)2.5A, IB=(-)125mA I...
Description DC / DC Converter Applications

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    2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA

SANYO[Sanyo Semicon Device]
SANYO SEMICONDUCTOR CO LTD
Sanyo Electric Co.,Ltd.
Part No. 2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30101 TS IM TA-3232 No.6912-1/5 2SA2039 / 2SC5706 Spe...1A, IB=(-)50mA IC=(--)2A, IB=(-)100mA IC=(--)2A, IB=(-)100mA IC=(--)10A, IE=0 IC=(--)100A, RBE=0 IC=...
Description Low-Power, Single/Dual-Voltage &#181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ...lector output capacitance Cob - 10 - pF VCB= -10V, IE=0A, f=1MHz Ton - 30 - ns IC= -1.0A Turn-on time IB1= -0.1A Tstg - 100 - ns IB2=0.1A Storage time Tf - 20 - ns VCC -25V Fall time !hFE RANK Q 120-270 R 180-390 !Electrical characte...
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ...s Ratings (-)160 (-)140 (-)6 (-)10 (-)20 2.5 110 150 -55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter C...1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)5A IC=(--)5A, ...
Description 140V / 10A, AF70W Output Applications

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    2SA2091S 2SA2091STPQ

TE Connectivity, Ltd.
ROHM[Rohm]
Part No. 2SA2091S 2SA2091STPQ
OCR Text ...ctrical characteristic curves -10 1000 COLLECTOR CURRENT : IC (A) SWITCHING TIME : SW(ns) -1 100ms 10ms 1ms DC Tstg DC CURRENT GAIN : hFE Ta=25C VCC= -25V IC / IB=10 / 1 1000 VCE= -2V 100 -0.1 100 Tf To...
Description 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)

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    2SA2093

ROHM[Rohm]
Part No. 2SA2093
OCR Text ...ctrical characteristic curves -10 1000 COLLECTOR CURRENT : IC (A) SWITCHING TIME : SW(ns) -1 100ms DC Tstg DC CURRENT GAIN : hFE 100ms 1ms 1s Ta=25C VCC= -25V IC / IB=10 / 1 1000 VCE= -2V 100 -0.1 100 ...
Description Power transistor ( 60V/2A)
Power transistor (−60V, −2A)
Power transistor (-60V, -2A)

File Size 81.67K  /  4 Page

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