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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM400DY-66H
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| OCR Text |
...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 400A, VGE = 15V VCC = 1650v, IC = 400A VGE1 = VGE2 = 15V RG = 7.5 Resistive load switching operation IE = 400A, VGE = 0V IE = 400A die / dt = -800A / s Junction to case, IGBT part (Per 1/2 module)... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE 400 A, 3300 V, N-CHANNEL IGBT
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| File Size |
42.85K /
4 Page |
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it Online |
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http://
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM800HB-66H
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| OCR Text |
...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 800A, VGE = 15V VCC = 1650v, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A, die / dt = -1600A / s Junction to case, IGBT part Junction to ca... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
45.62K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
CM800HB-66H
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| OCR Text |
...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 800A, VGE = 15V VCC = 1650v, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A, die / dt = -1600A / s Junction to case, IGBT part Junction to ca... |
| Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
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| File Size |
50.54K /
4 Page |
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it Online |
Download Datasheet |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
MBN400C33A
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| OCR Text |
...ode
4 TYPICAL [Conditions] VCC=1650v,Tc=125C VGE=15V,RG=10 Lp150nH Inductive Load 1
Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage
TYPICAL [Conditions] VCC=1650v,Tc=125C VGE=15V,RG=10 Lp150nH Inducti... |
| Description |
IGBT Module / Silicon N Channel IGBT
Silicon N-channel IGBT
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| File Size |
54.57K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric
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| Part No. |
CM800E2C-66H
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| OCR Text |
...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 800A, VGE = 15V VCC = 1650v, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to cas... |
| Description |
2nd-Version HVIGBT Modules
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| File Size |
76.04K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Semiconductor
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| Part No. |
CM1200HC-66H CM1200HC-66H05 CM1200HC-66H09
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| OCR Text |
...100kHz VGE = 0V, Tj = 25C VCC = 1650v, IC = 1200A, VGE = 15V, Tj = 25C IE = 1200A, VGE = 0V, Tj = 25C (Note 4) IE = 1200A, VGE = 0V, Tj = 125C (Note 4) VCC = 1650v, IC = 1200A, VGE = 15V RG(on) = 1.6, Tj = 125C, Ls = 100nH Inductive load VC... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
66.81K /
7 Page |
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it Online |
Download Datasheet |
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