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  180v npn medium power high gai Datasheet PDF File

For 180v npn medium power high gai Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    SB80-18

Sanyo Semicon Device
Part No. SB80-18
Description Schottky Barrier Diode (Twin Type Cathode Common) 180v, 8A Rectifier
180v/ 8A Rectifier

File Size 82.36K  /  3 Page

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    MITEQ, Inc.
MITEQ INC
Part No. AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-040080-15-25P AMF-6B-120180-50-28P AMF-4F-200300-90-20P AMF-6F-200300-90-20P AMF-3D-001040-28-24P-1 AMF-2B-080180-80-27P AMF-1D-005020-60-23P-1 AMF-4F-275310-90-23P AMF-2D-10M-2G-30-23P AMF-3B-120180-50-25P AMF-3B-020040-15-25P AMF-3B-020080-55-27P AMF-4B-020080-45-27P AMF-4B-020040-13-25P AMF-2D-10M-4G-32-22P AMF-4B-010020-20-33P MITEQINC-AMF-1B-040080-80-28P MITEQINC-AMF-9B-140145-37P-WG AMF-6F-275310-90-25P AMF-8F-275310-90-29P AMF-5B-120180-60-28P AMF-4D-001060-27-23P AMF-4B-120180-70-27P AMF-8F-275310-90-25P AMF-8F-370410-90-27P AMF-2B-120180-80-27P
Description 4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND high power AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER

File Size 35.31K  /  6 Page

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    AH102 AH102-PCB AH102-PCS

List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
WJ Communications
Part No. AH102 AH102-PCB AH102-PCS
Description JT 21C 21#16 PIN WALL RECP
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-21 RoHS Compliant: No
medium power/ high Linearity Amplifier
medium power, high Linearity Amplifier

File Size 76.19K  /  6 Page

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    NEC[NEC]
Part No. 2SK2132 2SK2132-T
Description high-voltage power MOS FET 180v/4A
SWITCHING N-CHANNEL power MOS FET INDUSTRIAL USE

File Size 416.22K  /  8 Page

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    2N2222ADCSM

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. 2N2222ADCSM
Description high Speed medium power npn Switching Transistor In Hermetic Cermic Surface Mount Package For high Reliability Application(高速、中等功率、开关型npn晶体管(高可靠性、陶瓷表贴封装))
DUAL high SPEED, medium power npn SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR high RELIABILITY APPLICATIONS

File Size 18.06K  /  2 Page

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    CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264Q CFB940Q CFD1264P CFB940P CFD1264AP

Continental Device India Limited
Part No. CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264Q CFB940Q CFD1264P CFB940P CFD1264AP
Description 2.000W power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W power PNP Plastic Leaded Transistor. 180v Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W power PNP Plastic Leaded Transistor. 180v Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W power PNP Plastic Leaded Transistor. 180v Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W power npn Plastic Leaded Transistor. 180v Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W power npn Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W power npn Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W power npn Plastic Leaded Transistor. 180v Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W power npn Plastic Leaded Transistor. 180v Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP

File Size 146.53K  /  3 Page

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    2N2369ADCSM

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. 2N2369ADCSM
Description high Speed medium power npn Switching Transistor In Hermetic Cermic Surface Mount Package For high Reliability Application(高速、中等功率、开关型npn晶体管(高可靠性、陶瓷表贴封装))
DUAL high SPEED, medium power, npn SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

File Size 17.07K  /  2 Page

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    2N2907ADCSM

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. 2N2907ADCSM
Description Dual high Speed medium power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For high Reliability Application(高速、中等功率、开关型双PNP晶体管(高可靠性、陶瓷表贴封装))
DUAL high SPEED, medium power PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR high RELIABILITY APPLICATIONS

File Size 15.94K  /  2 Page

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    ZETEX[Zetex Semiconductors]
Part No. FCX555 FCX555TA
Description 180v high voltage PNP switching transistor in SOT89

File Size 101.20K  /  6 Page

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    FCX555TA

Diodes Incorporated
Part No. FCX555TA
Description 180v high voltage PNP switching transistor in SOT89

File Size 98.63K  /  6 Page

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For 180v npn medium power high gai Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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