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NTE29 45970 MAX168 MM6572 BU508D STP20N 720MW 30KPA75A
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  25-32a Datasheet PDF File

For 25-32a Found Datasheets File :: 1194    Search Time::1.625ms    
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    SGH20N60RUFD SGH20N60RUFDTU

FAIRCHILD[Fairchild Semiconductor]
Part No. SGH20N60RUFD SGH20N60RUFDTU
OCR Text ... SGH20N60RUFD 600 20 32 20 60 25 220 10 195 75 -55 to +150 -55 to +150 300 Units V V A A A A A us W W C C C Notes : (1) Repetitive r...32A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V Dynamic Characteristics Cies Coes Cres Input Cap...
Description Discrete, Short Circuit Rated IGBT with Diode

File Size 624.81K  /  8 Page

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    SGH20N60RUF

FAIRCHILD[Fairchild Semiconductor]
Part No. SGH20N60RUF
OCR Text ... 51 52 311 568 1031 1599 -55 10 25 14 --70 200 --1400 --75 400 --2240 -80 15 40 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 20A, RG = ...
Description Short Circuit Rated IGBT

File Size 538.88K  /  7 Page

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    SGP20N60 SGP20N60RUF

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FAIRCHILD[Fairchild Semiconductor]
Part No. SGP20N60 SGP20N60RUF
OCR Text ... 51 52 311 568 1031 1599 -55 10 25 7.5 --70 200 --1400 --75 400 --2240 -80 15 40 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 20A, RG =...
Description Short Circuit Rated IGBT

File Size 537.60K  /  7 Page

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    SGW20N60 SGW20N60RUF

FAIRCHILD[Fairchild Semiconductor]
Part No. SGW20N60 SGW20N60RUF
OCR Text ... 51 52 311 568 1031 1599 -55 10 25 7.5 --70 200 --1400 --75 400 --2240 -80 15 40 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 20A, RG =...
Description    Short Circuit Rated IGBT

File Size 536.49K  /  7 Page

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    CXA2002 CXA2002R

SONY[Sony Corporation]
Part No. CXA2002 CXA2002R
OCR Text ... IC V C C mW 4.75 +0.5 -0.25 3.15 0.15 V V Sony reserves the right to change products and specifications without prior notice. T...32A/s 0.6V or below High: 17A/s 2.3V or above (The fall time is 32A/s in both cases.) 1.5V 25k...
Description 2-channel Recording/Playback Amplifier

File Size 419.23K  /  25 Page

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    MC74HC32A MC74HC32AD MC74HC32ADR2 MC74HC32ADT MC74HC32ADTR2 MC74HC32AN MC74HC32AFEL MC74HC32A-D

ONSEMI[ON Semiconductor]
Part No. MC74HC32A MC74HC32AD MC74HC32ADR2 MC74HC32ADT MC74HC32ADTR2 MC74HC32AN MC74HC32AFEL MC74HC32A-D
OCR Text ...C + 0.5 - 0.5 to VCC + 0.5 20 25 50 750 500 450 Vout Iin DC Output Voltage (Referenced to GND) DC Input Current, per Pin mA mA mA Iout DC Output Current, per Pin ICC PD DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, ...
Description Quad 2-Input OR Gate HC/UH SERIES, QUAD 2-INPUT OR GATE, PDSO14
Quad OR Gate
Quad 2-Input OR Gate High-Performance Silicon-Gate CMOS

File Size 129.79K  /  8 Page

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    APT5015BLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5015BLC
OCR Text ...UNIT Volts Amps 500 32 0.150 25 250 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS =...32A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 28.40K  /  2 Page

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    APT5015 APT5015BVR

ADPOW[Advanced Power Technology]
Part No. APT5015 APT5015BVR
OCR Text ...UNIT Volts Amps 500 32 0.150 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS =...32A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description POWER MOS V 500V 32A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.16K  /  4 Page

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    IRFP250 IRFP250B IRFP250BFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFP250 IRFP250B IRFP250BFP001
OCR Text ...erse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---2600 330 75 3400 430 100 pF pF pF Switching Characteristics td(on) tr td...32A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 32A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25...
Description 200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A
200V N-Channel MOSFET

File Size 667.05K  /  8 Page

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