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HYNIX SEMICONDUCTOR INC
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Part No. |
HY27SH084G2M-TPEP
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OCR Text |
256m x16bit) nand flash document title 4gbit (512mx8bit / 256mx1 6bit) nand flash memory revision history revision no. history draft date re...s t c o n di t io n s ( i cc1) test conditions ( i li, i lo ) before t rc =50ns, ce#= v il , i ... |
Description |
512M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
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File Size |
423.44K /
47 Page |
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SAMSUNG[Samsung semiconductor]
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Part No. |
KBE00S009M-D411 KBE00S009M
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OCR Text |
... 1G Bit (128Mx8) Nand Flash*2 / 256M Bit (4Mx16x4Banks) Mobile SDRAM*2
Revision No. History
0.0 Initial issue. - 2Gb NAND DDP M-Die_ Ver 0...s web site. http://samsungelectronics.com/semiconductors/products/products_index.html The attached d... |
Description |
From old datasheet system 1Gb NAND x 2 256Mb Mobile SDRAM x 2
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File Size |
1,891.88K /
86 Page |
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Nanya
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Part No. |
M2S4G64CB8HB5N M2S1G64CBH4B5P
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OCR Text |
256m x 64 / 4 g b: 512 m x 64 pc3 - 85 00 / pc3 - 10600 / pc3 - 12800 unbuffered ddr 3 so - dimm rev 1. 2 1 0 9 /...s o - dimm based on 128 mx16 ddr 3 sdram b - die devices . ? 2gb: 256mx64 unbuffered ... |
Description |
Unbuffered DDR3 SO-DIMM
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File Size |
617.21K /
28 Page |
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Samsung Electronic
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Part No. |
KBE00S009M-D411
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OCR Text |
... 1g bit (128mx8) nand flash*2 / 256m bit (4mx16x4banks) mobile sdram*2
mcp memory 3 kbe00s009m-d411 revision 1.0 may 2005 general descri...s(max.) - serial page access : 50ns(min.) ? fast write cycle time - program time : 200 s(typ.)... |
Description |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
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File Size |
1,899.39K /
86 Page |
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Samsung Electronic
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Part No. |
KBE00S003M KBE00S003M-D411
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OCR Text |
... 1g bit (128mx8) nand flash*2 / 256m bit (8mx8x4banks) mobile sdram*2
mcp memory 3 kbe00s003m-d411 revision 1.0 may 2005 general descrip...s(max.) - serial page access : 50ns(min.) ? fast write cycle time - program time : 200 s(typ.)... |
Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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File Size |
1,809.86K /
86 Page |
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it Online |
Download Datasheet
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Price and Availability
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