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  256m-s Datasheet PDF File

For 256m-s Found Datasheets File :: 747    Search Time::1.032ms    
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    HYNIX SEMICONDUCTOR INC
Part No. HY27SH084G2M-TPEP
OCR Text 256m x16bit) nand flash document title 4gbit (512mx8bit / 256mx1 6bit) nand flash memory revision history revision no. history draft date re...s t c o n di t io n s ( i cc1) test conditions ( i li, i lo ) before t rc =50ns, ce#= v il , i ...
Description 512M X 8 FLASH 1.8V PROM, 30 ns, PDSO48

File Size 423.44K  /  47 Page

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    K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text 256M GDDR SDRAM 256Mbit GDDR SDRAM 4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.7 June 2004 Samsung E...s ( 1DQS / Byte ) * Data I/O transactions on both edges of Data strobe * DLL aligns DQ and DQS trans...
Description 256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存

File Size 204.60K  /  16 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KBE00S009M-D411 KBE00S009M
OCR Text ... 1G Bit (128Mx8) Nand Flash*2 / 256M Bit (4Mx16x4Banks) Mobile SDRAM*2 Revision No. History 0.0 Initial issue. - 2Gb NAND DDP M-Die_ Ver 0...s web site. http://samsungelectronics.com/semiconductors/products/products_index.html The attached d...
Description From old datasheet system
1Gb NAND x 2 256Mb Mobile SDRAM x 2

File Size 1,891.88K  /  86 Page

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    Nanya
Part No. M2S4G64CB8HB5N M2S1G64CBH4B5P
OCR Text 256m x 64 / 4 g b: 512 m x 64 pc3 - 85 00 / pc3 - 10600 / pc3 - 12800 unbuffered ddr 3 so - dimm rev 1. 2 1 0 9 /...s o - dimm based on 128 mx16 ddr 3 sdram b - die devices . ? 2gb: 256mx64 unbuffered ...
Description Unbuffered DDR3 SO-DIMM

File Size 617.21K  /  28 Page

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    Samsung Electronic
Part No. KBE00S009M-D411
OCR Text ... 1g bit (128mx8) nand flash*2 / 256m bit (4mx16x4banks) mobile sdram*2 mcp memory 3 kbe00s009m-d411 revision 1.0 may 2005 general descri...s(max.) - serial page access : 50ns(min.) ? fast write cycle time - program time : 200 s(typ.)...
Description 1Gb NAND x 2 256Mb Mobile SDRAM x 2

File Size 1,899.39K  /  86 Page

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    K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238F-JC2A0
OCR Text 256M GDDR SDRAM 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DL...s ( 1DQS / Byte ) * Data I/O transactions on both edges of Data strobe * DLL aligns DQ and DQS trans...
Description 256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144

File Size 295.12K  /  17 Page

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    Samsung Electronic
Part No. KBE00S003M KBE00S003M-D411
OCR Text ... 1g bit (128mx8) nand flash*2 / 256m bit (8mx8x4banks) mobile sdram*2 mcp memory 3 kbe00s003m-d411 revision 1.0 may 2005 general descrip...s(max.) - serial page access : 50ns(min.) ? fast write cycle time - program time : 200 s(typ.)...
Description 1Gb NAND*2 256Mb Mobile SDRAM*2

File Size 1,809.86K  /  86 Page

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