Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQP2N60C 97K0171 |
onsemi |
Mosfet, N Channel, 600V, 2A, To-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Onsemi FQP2N60C |
|
0 |
FQPF2N60C 91K9885 |
onsemi |
Mosfet, N, To-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:23W; Msl:-Rohs Compliant: Yes |Onsemi FQPF2N60C |
|
0 |
FQPF12N60C 73AK1129 |
onsemi |
Mosfet, N, To-220F |Onsemi FQPF12N60C |
500: USD1.46 250: USD1.5 100: USD1.79
|
0 |
HGTG12N60C3D 58K1586 |
onsemi |
Single Igbt, 600V, 24A; Collector Current:24A; Power Dissipation:104W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi HGTG12N60C3D |
|
0 |
SPU02N60C3BKMA1 33P8227 |
Infineon Technologies AG |
Mosfet, N Ch, 650V, 1.8A, To-251-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:1.8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon SPU02N60C3BKMA1 |
10500: USD0.658 3000: USD0.706 1000: USD0.757 500: USD0.959 100: USD1.16 10: USD1.49 1: USD1.66
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
SPP02N60C3XKSA1 2156-SPP02N60C3XKSA1-IT-ND |
Rochester Electronics LLC |
MOSFET N-CH 600V 1.8A TO220-3 |
630: USD0.48
|
73020 |
FQP12N60C 2156-FQP12N60C-ND |
Rochester Electronics LLC |
POWER FIELD-EFFECT TRANSISTOR, 1 |
166: USD1.81
|
4340 |
FQD2N60CTM FQD2N60CTMTR-ND |
onsemi |
MOSFET N-CH 600V 1.9A DPAK |
25000: USD0.2915 12500: USD0.29442 5000: USD0.31797 2500: USD0.33563
|
2500 |
FQD2N60CTM FQD2N60CTMCT-ND |
onsemi |
MOSFET N-CH 600V 1.9A DPAK |
1000: USD0.37685 500: USD0.4428 100: USD0.5299 10: USD0.765 1: USD0.88
|
1166 |
FQP12N60C 2832-FQP12N60C-ND |
Flip Electronics |
MOSFET N-CH 600V 12A TO220-3 |
400: USD1.45
|
869 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQP12N60C FQP12N60C |
onsemi |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP12N60C) |
47000: USD1.3392 24000: USD1.3824 4700: USD1.4256 2400: USD1.4688 930: USD1.512 470: USD1.5552 463: USD1.5984
|
0 |
SPU02N60C3XK SPU02N60C3BKMA1 |
Infineon Technologies AG |
Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-251 - Rail/Tube (Alt: SPU02N60C3BKMA1) |
|
0 |
SIPC02N60C3X1SA1 SIPC02N60C3X1SA1 |
Infineon Technologies AG |
LOW POWER_PRICE/PERFORM - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC02N60C3X1SA1) |
1: USD0.1339
|
0 |
SIPC02N60C3X1SA1 SIPC02N60C3X1SA1 |
Infineon Technologies AG |
LOW POWER_PRICE/PERFORM - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC02N60C3X1SA1) |
|
0 |
FQD2N60CTM FQD2N60CTM |
onsemi |
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N60CTM) |
20000: USD0.29788 15000: USD0.30677 10000: USD0.31567 5000: USD0.32456 2500: USD0.33345
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IXGN72N60C3H1 747-IXGN72N60C3H1 |
IXYS Corporation |
IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A |
1: USD30.74 10: USD26.14
|
576 |
FQD2N60CTM 512-FQD2N60CTM |
onsemi |
MOSFETs N-CH/600V/2A/A.QFET |
1: USD0.87 10: USD0.765 100: USD0.529 500: USD0.442 1000: USD0.376 2500: USD0.335 5000: USD0.334
|
2500 |
IXGK72N60C3H1 747-IXGK72N60C3H1 |
IXYS Corporation |
IGBT Transistors 75Amps 600V |
1: USD12.2 10: USD11.46 25: USD9.74 100: USD9.29 250: USD8.99 500: USD8.41 1000: USD7.72
|
0 |
IXGA12N60CD1 747-IXGA12N60CD1 |
IXYS Corporation |
IGBT Transistors 24 Amps 600V 2.7 Rds |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IXGH32N60C
|
IXYS Corporation |
|
|
60 |
IXGH72N60C3
|
IXYS Corporation |
|
|
30 |
IRFP22N60C3
|
International Rectifier |
|
48: USD2.509 16: USD2.688 6: USD3.4944 1: USD5.376
|
50 |
SPP02N60C3
|
Infineon Technologies AG |
|
|
100 |
IXGP12N60CDI
|
IXYS Corporation |
|
|
18 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQD2N60CTF
|
Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, N-Channel, MOSFET ' |
1000: USD0.3792 500: USD0.4015 100: USD0.4193 25: USD0.4372 1: USD0.4461
|
510 |
FQI12N60CTU
|
Fairchild Semiconductor Corporation |
12A, 600V, 0.65ohm, N-Channel Power MOSFET ' |
1000: USD0.9379 500: USD0.9931 100: USD1.04 25: USD1.08 1: USD1.1
|
2882 |
HGTG12N60C3D
|
Fairchild Semiconductor Corporation |
24A, 600V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
1000: USD4.08 500: USD4.32 100: USD4.51 25: USD4.71 1: USD4.8
|
36 |
HGTG12N60C3D
|
Harris Semiconductor |
24A, 600V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
1000: USD4.08 500: USD4.32 100: USD4.51 25: USD4.71 1: USD4.8
|
300 |
FQP2N60C
|
onsemi |
FQP2N60C - Power Field-Effect Transistor, 2A, 600V, 4.7ohm, N-Channel, MOSFET, TO-220AB |
1000: USD0.5063 500: USD0.5361 100: USD0.56 25: USD0.5838 1: USD0.5957
|
58 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IXGN72N60C3H1 IXGN72N60C3H1 |
IXYS Corporation |
IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A |
300: USD25.41
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQD2N60CTM-WS FQD2N60CTM-WS |
onsemi |
Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK |
500: USD0.427 100: USD0.51 25: USD0.576 5: USD0.762 1: USD1.067
|
0 |
IXGH72N60C3 IXGH72N60C3 |
IXYS Corporation |
Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 |
30: USD4.9 10: USD5.45 3: USD6.17 1: USD6.86
|
0 |
IXGN72N60C3H1 IXGN72N60C3H1 |
IXYS Corporation |
Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W |
10: USD31.14 3: USD35.27 1: USD39.19
|
0 |
IXGX72N60C3H1 IXGX72N60C3H1 |
IXYS Corporation |
Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ |
30: USD8.25 10: USD9.18 3: USD10.39 1: USD11.65
|
0 |
YJ2N60CI YJ2N60CI-YAN |
Yangzhou Yangjie Electronics Co Ltd |
Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP |
1000: USD0.121 250: USD0.145 100: USD0.164 25: USD0.182 3: USD0.269
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQD2N60CTM
|
onsemi |
N-Channel 600 V 1.9 A 4.7 Ohm Surface Mount Power Mosfet - TO-252-3 |
|
4627 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQD2N60CTF
|
Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
|
6000 |
SPD02N60C3
|
Infineon Technologies AG |
Cool MOS Power Transistor Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
445 |
FQP2N60C
|
Fairchild Semiconductor Corporation |
2.0 A, 600 V N-CHANNEL MOSFET Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
150 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQD2N60CTM FQD2N60CTM |
onsemi |
POWER MOSFET TRANSISTOR |
2500: USD0.28
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
SPP02N60C3XKSA1
|
Infineon Technologies AG |
INSTOCK |
|
2000 |
SPP02N60C3XKSA1
|
|
INSTOCK |
|
500 |
12N60C3D
|
Fairchild Semiconductor Corporation |
INSTOCK |
|
77 |
SPPO2N60C3XKSA1
|
Infineon Technologies AG |
INSTOCK |
|
500 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQD2N60CTM FQD2N60CTM |
onsemi |
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R (Alt: FQD2N60CTM) |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IRFB22N60C3
|
International Rectifier |
IN STOCK SHIP TODAY |
|
48 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQP12N60C
|
onsemi |
Stock, ship today |
1: USD1.08
|
869 |
FQU2N60CTU
|
onsemi |
Stock, ship today |
|
40320 |
HGTP12N60C3D
|
onsemi |
Stock, ship today |
1: USD0.87
|
1600 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQD2N60CTM
|
onsemi |
|
2500: USD0.5758 7500: USD0.5328
|
7500 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IXGH32N60C
|
IXYS Integrated Circuits Division |
IGBT DIS.SINGLE 32A 600V H.FAST TO247-3 |
|
0 |
IXGH72N60C3
|
IXYS Integrated Circuits Division |
IGBT DIS.SINGLE 72A 600V GENX3 TO247 |
|
0 |
IXGN72N60C3H1
|
IXYS Integrated Circuits Division |
IGBT MOD.DIODE SINGLE 52A 600V GENX3 SOT227B |
|
0 |
IXGR72N60C3
|
IXYS Integrated Circuits Division |
IGBT DIS.SINGLE 35A 600V GENX3 ISOPLUS247 |
|
0 |
IXGR72N60C3D1
|
IXYS Integrated Circuits Division |
IGBT DIS.DIODE SINGLE 35A 600V GENX3 ISOPLUS247 |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQD2N60CTF
|
Fairchild Semiconductor Corporation |
|
|
5160 |
FQD2N60CTF
|
MFG UPON REQUEST |
|
|
4235 |
SPD02N60C3
|
Eupec Gmbh & Co Kg |
|
|
2103 |
SPD02N60C3
|
Infineon Technologies AG |
|
|
408 |
SPB02N60C3
|
Eupec Gmbh & Co Kg |
|
|
108 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FQD2N60CTF
|
Fairchild Semiconductor Corporation |
FQD2N60CTF |
|
0 |
SPD02N60C3
|
Infineon Technologies AG |
SPD02N60C3 |
|
0 |
IXGH32N60C
|
IXYS Corporation |
IXGH32N60C |
|
0 |
HGTG12N60C3D
|
onsemi |
HGTG12N60C3D |
|
0 |
HGTG12N60C3D
|
Fairchild Semiconductor Corporation |
HGTG12N60C3D |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
SPD02N60C3
|
Infineon Technologies AG |
N-CHANNEL POWER MOSFET |
120: USD0.424 290: USD0.348 450: USD0.337 615: USD0.327 795: USD0.316 1065: USD0.283
|
47320 |
FQP2N60C
|
Fairchild Semiconductor Corporation |
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 600V 2A TO-220 |
125: USD0.407 300: USD0.334 465: USD0.323 640: USD0.313 830: USD0.303 1110: USD0.271
|
11372 |
SPD02N60C3BTMA1
|
Infineon Technologies AG |
MOSFET N-CH 650V 1.8A DPAK |
120: USD0.424 290: USD0.348 450: USD0.337 615: USD0.327 795: USD0.316 1065: USD0.283
|
47318 |
FQD2N60CTM
|
Fairchild Semiconductor Corporation |
MOSFET N-CH 600V 1.9A DPAK |
55: USD0.99 125: USD0.812 195: USD0.787 265: USD0.761 340: USD0.736 455: USD0.66
|
232324 |
|
|