| |
|
 |
RFMD[RF Micro Devices]
|
| Part No. |
RF2192 RF2192PCBA
|
| OCR Text |
...LIFIERS
Product Description
3.75
2 0.45 0.28 0.75 0.50 0.80 TYP 1
1
The RF2192 is a high-power, high-efficiency linear amplifie...5V, Freq=824MHz to 849MHz (unless otherwise specified)
824 27
849 30 -33 <-60
29 37 -48 -58... |
| Description |
3V 900MHZ LINEAR POWER AMPLIFIER
|
| File Size |
130.74K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
|
| Part No. |
CHA5093 CHA5093-99F_00 CHA5093-99F/00
|
| OCR Text |
...umption, 600mA @ 6V Chip size : 3.27 x 2.47 x 0.10 mm
20 15 10 5 0 -5 -10 -15 -20 -25 15 20 Frequency 25 30 S11 S22
Typical on Wafer M...5V could be apply. With this biasing point , the output power at 1dB compression decreases by around... |
| Description |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 22 - 26GHz高功率放大器
22-26GHz High Power Amplifier
|
| File Size |
158.56K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| Part No. |
MWS11-PH22 MWS11-PH22-CS MWS11-2
|
| OCR Text |
................................. +3.2V DC Input RF Power ........................................................................................5V
C 10
R1
VB2 VCC2
VCC T2
VB1
R F IN line C 16 C3
M W S 11P H 22-C S
line C6 ... |
| Description |
CMDA Power Amplifier 医师协会功率放大
WCDMA InGaP HBT Power Amplifier
|
| File Size |
109.82K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
CLY15 Q62702-L99
|
| OCR Text |
..._________
Symbol
min 2.4 -3.8
typ 3.2 20 -2.8
max 4.8 400 70 -1.8
Unit A A A V dB
IDSS ID
Cut-off current
VDS = 3V VGS...5V
Pin = 30 dBm
Po
f = 1.8GHz
34.5
35
-
dBm
ID = 1.4A
1dB-Compression Point *... |
| Description |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
| File Size |
59.12K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
FLM7785-6F
|
| OCR Text |
.... 2700 4050 2500 -1.5 38.5 8.5 -3.0 Unit mA mS V V dBm dB mA % dB dBc C/W C
1750 2250 31 -46 4.0 0.6 4.8 80
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1 August 2004
1
FLM7785-6F
C-Band Internally ... |
| Description |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
| File Size |
231.22K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Maxim
|
| Part No. |
MAX2130
|
| OCR Text |
...B with a noise figure less than 3.2dB over the 44MHz to 878MHz frequency range. The MAX2130 features an externally adjustable bias control, ...5V single supply and only requires 93mA of supply current when nominally biased.
________________... |
| Description |
"Broadband, Two-Output, Low-Noise Amplifier for TV Tuner Applications"
From old datasheet system
|
| File Size |
211.91K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
TRIQUINT[TriQuint Semiconductor]
|
| Part No. |
TGS2306-EP TGS2306-EPU
|
| OCR Text |
... VC IC PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Control Voltage Control Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Parameter Value -7 V 2.25 mA TBD TBD 150... |
| Description |
High Power DC - 18GHz SPDT FET Switch
|
| File Size |
301.20K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
