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For 3.6gb s Found Datasheets File :: 76    Search Time::1.797ms    
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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4R271669B-NCK7 K4R271669B-MCK7 K4R271669B-MCK8 K4R271669B-NCK8 K4R271669B-NCG6 K4R271669B-MCG6 K4R441869B-MCK8 K4R441869B-MCK7 K4R441869B-MCG6 K4R441869B-NCG6
OCR Text ...buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - interleaved transactions advanced power management: ...6gb/s. control registers: the cmd, sck, sio0, and sio1 pins appear in the upper center of figure2...
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM 256 × 16/18位32秒银行直接RDRAMTM

File Size 314.70K  /  20 Page

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    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
OCR Text ...C (Row Access Time) ns 45 45 53.3 45 45 53.3 Part Number Features Highest sustained bandwidth per DRAM device K4R271669B-Nb(M)CcK...6GB/s sustained data transfer rate - separate control and data buses for maximized efficiency - sepa...
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

File Size 304.91K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6
OCR Text ...buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - interleaved transactions advanced power management: - ...6gb/s. control registers: the cmd, sck, sio0, and sio1 pins appear in the upper center of figure2...
Description 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

File Size 4,098.44K  /  64 Page

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    KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD2D KM416RD2C KM418RD4C KM416RD8D KM418RD4D KM

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD2D KM416RD2C KM418RD4C KM416RD8D KM418RD4D KM416RD4D KM418RD2C KM416RD2D KM416RD8C KM418RD8C KM418RD8D KM418RD2AC KM418RD8ACD-RG60 KM416RD8ACDB-RCG60
OCR Text ...C(D) ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 Direct RDRAMTM KM 4 XX XX XX X X - X X XX sAMsUNG Memory Device Organization Produ...6GB/s sustained data transfer rate - separate control and data buses for maximized efficiency - sepa...
Description 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
24.9K 1% 1/4W -200 TO 500 PPM/C MF 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
BACKsHELL
CLAMP

File Size 4,061.75K  /  64 Page

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    K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R2716

Sunon, Inc.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NBMCCG6
OCR Text ...00 tRAC (Row Access Time) ns 53.3 45 45 53.3 45 45 Part Number Features Highest sustained bandwidth per DRAM device K4R271669A-Nb...6GB/s sustained data transfer rate - separate control and data buses for maximized efficiency - sepa...
Description 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256 × 16/18位2 * 16属银行直接RDRAMTM

File Size 4,066.36K  /  64 Page

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    88SE9125 88SE9120 88SE9110 88SE9111 88SE9128

Marvell Technology Group Ltd.
Part No. 88sE9125 88sE9120 88sE9110 88sE9111 88sE9128
OCR Text ...* One 133 MBps PATA Port * sATA 3.0 Compliant * PCIe 2.0 Compliant * Native Command Queuing * esATA support * Hardware RAID * Hardware Encry...6Gb/s drives and one PATA device. Embedded with a Marvell sheeva, ARM instruction set compliant CPU ...
Description sATA 6Gb/s RAID Controllers

File Size 283.53K  /  2 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM416RD8As-RBM80
OCR Text ... x x - x x xx 1 2 3 4 5 6 7 8 samsung memory device organization product speed package type revision density 1. samsung memory...6gb/s sustained data transfer rate - separate control and data buses for maximized efficiency - se...
Description 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package

File Size 3,846.56K  /  64 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416RD8As-sCM80 KM416RD8As KM416RD8As-RBM80
OCR Text ...D8As ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 Target Direct RDRAMTM KM 4 XX XX XX X X - X X XX sAMsUNG Memory Device Organizatio...6GB/s sustained data transfer rate - separate control and data buses for maximized efficiency - sepa...
Description 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package

File Size 3,826.45K  /  64 Page

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For 3.6gb s Found Datasheets File :: 76    Search Time::1.797ms    
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