4.0a 400v pdf Datasheet P2 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : E9303 18N20 SMAJ50A ACT374 03MKP C1506 35EH5 LM1101N5
	Product Description
	Full Text Search

4.0a 400v Datasheet PDF File

For 4.0a 400v Found Datasheets File :: 2702 Search Time::1.313ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text	...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device T...
Description	40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 3.3V 36-mc CPLD
File Size	176.68K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGP20N60HS SGW20N60HS
OCR Text	... Value min. 600 Typ. 2.8 3.5 3 4 14 max. 3.15 4.00 5 Unit V A 40 2500 100 nA S IGES gfs V C E = 0V , V G E =2 0 V V C E = 20...0A 10Hz TC=110C IC, COLLECTOR CURRENT 15s 10A 50s 200s 1A 1ms Ic Ic DC 0,1A 1V 100Hz...
Description	High Speed IGBT in NPT-technology
File Size	429.45K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKW20N60 Q67040-S4242
OCR Text	...lue min. 600 1.7 1.2 3 Typ. 2 2.4 1.4 1.25 4 14 1100 107 63 100 13 200 max. 2.4 2.9 1.8 1.65 5 Unit V A 40 2500 100 1320 128 76 130...0A 10Hz TC=110C TC=80C 10A 50s 200s 1A 1ms Ic 0.1A 1V 10V 100V DC 100Hz 1kHz 1...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	272.85K / 14 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	Z00607DA Z00607DA1BA2 Z00607MA Z00607MA1BA2
OCR Text	...Unit V May 1999 - Ed: 1 1/4 Z00607DA / Z00607MA THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to lead ...0A dIG/dt = 0.25A/s IT= 200 mA Gate open IG= 1.2 IGT ITM= 1.1A tp= 380s VD = VDRM VR = VRRM VD=67%VD...
Description	SENSITIVE GATE TRIACS
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SK2677
OCR Text	...ions Min. 900 Typ. Max. 250 0.1 4.8 2.5 8.0 1.05 3.0 Unit V A S V ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, V...0A 1 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK26...
Description	HVX-2 Series Power MOSFET(900V 10A)
File Size	417.58K / 12 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT5010JN APT5012JN APT5012
OCR Text	...ER MOSFETS 500 48 192 30 520 4.16 500 43 172 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Le...
Description	POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
File Size	60.42K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...0 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Sourc...0A, diF /dt = -15A/S, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/S, VR = 350...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...0 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Sourc...0A, diF /dt = -15A/S, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/S, VR = 350...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BN APT5022BN
OCR Text	... RDS(ON) 0.22 250 1000 100 2 4 A nA Volts IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) ...
Description	POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.03K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5025BN APT5030BN
OCR Text	... RDS(ON) 0.30 250 1000 100 2 4 A nA Volts IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) ...
Description	POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.13K / 4 Page	View it Online	Download Datasheet

For 4.0a 400v Found Datasheets File :: 2702 Search Time::1.313ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |