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INFINEON[Infineon Technologies AG]
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| Part No. |
BAW79D BAW79a BAW79B BAW79C W79B
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| OCR Text |
...
IF IFM IFS Ptot Tj Tstg
BAW 79a 50 50
BAW 79B 100 100
1 1 10 1
BAW 79C 200 200
BAW 79D 400 400
Unit V
A
Surge forward current, t = 1 s
W C
150 -65 ... 150
35
K/W
1
Aug-20-2001
BAW79a...BAW79D
El... |
| Description |
Silicon Switching Diodes
1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
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| File Size |
35.50K /
3 Page |
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California Eastern Laboratories Inc
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| Part No. |
NE5520279a-T1A
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| OCR Text |
... (Units in mm)
PACKAGE OUTLINE 79a
4.2 Max 1.5 0.2
Source Source Gate Drain
0.8 0.15 4.4 Max
* HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz * SINGLE SUPPLY: 2.4 to 6.0 V
0.9 0.2
A
0.4 0.15 5.7 Max
1.0 Max
0.8 Ma... |
| Description |
Transistor - Datasheet Reference
From old datasheet system
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| File Size |
40.25K /
3 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BAS79D BAS79 BAS79a BAS79B BAS79C
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| OCR Text |
... forward current
Marking BAS 79a BAS 79B BAS 79C BAS 79D 1 = A1 1 = A1 1 = A1 1 = A1
Pin Configuration 2=C1/2 3 = A2 2=C1/2 3 = A2 2=C1/2 3 = A2 2=C1/2 3 = A2
Package 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223
Symbo... |
| Description |
Silicon Switching Diodes 硅开关二极管
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| File Size |
32.35K /
3 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
FDPF79N15
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| OCR Text |
...50v n-channel mosfet features ? 79a, 150v, r ds(on) = 0.03 @v gs = 10 v ? low gate charge ( typical 56 nc) ? low crss ( typical 96pf) ?fast switching ? improved dv/dt capability description these n-channel enhancement mode power field ... |
| Description |
150V N-Channel MOSFET 79 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
1,248.56K /
10 Page |
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Black Box, Corp.
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| Part No. |
PX10051EJ07V0TN
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| OCR Text |
...21 75 [75] 21 77 [77] 21 79a [79a] 22 83a, 83b [83a, 83b] 22 84, 84a, 84c [84, 84a, 84c] 22 95 [95] 23 96/99 [96/99] 2 3 s01 [s01] 23 t-61 [t-61] 23 t-65 [t-65] 24 t-78 [t-78] 24 t-86 [t-86] 24 t-91m [t-... |
| Description |
RF and Microwave Devices Packages 射频和微波器件封
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| File Size |
219.61K /
29 Page |
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it Online |
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NEC Corp.
NEC[NEC]
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| Part No. |
NE5520279a-T1 NE5520279a
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| OCR Text |
... (Units in mm)
PACKAGE OUTLINE 79a
(Bottom View)
4.2 MAX. Source 1.50.2 Source
0X001
4.4 MAX.
* HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz * SINGLE SUPPLY: 2.8 to 6.0 V
A
0.40.15 5.7 MAX. 0.20.1
0.80.15
1.0 MAX.... |
| Description |
NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
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| File Size |
163.74K /
7 Page |
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it Online |
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