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SUNMATE electronic Co.,...
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| Part No. |
1SMB90A 1SMB26CA 1SMB78CA 1SMB90CA 1SMB5.0CA
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| OCR Text |
...0 w peak forward surge current, 8.3ms single half sine wave s uperimposed on rated load (jedec method) (notes1, 2, & 3) i fsm 100 a instanta...1mx 1cw 1mw 1cv 1mv 1cu 1mu 1ct 1mt 1cs 1ms 1cr 1mr 1cq 1mq 1cp 1mp 1cn 1mn 1cm ... |
| Description |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE
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| File Size |
895.91K /
5 Page |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1441AV33 CY7C1443AV33 CY7C1447AV33
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| OCR Text |
...hz unit maximum access time 6.5 8.5 ns maximum operating current 310 290 ma maximum cmos standby current 120 120 ma note: 1. for best-pract...1mx 36) nc a a a a a 1 a 0 nc/72m a v ss v dd a a a a a a a a a nc nc v ddq v ssq nc dqp a dq a dq a... |
| Description |
36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM)
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| File Size |
519.31K /
31 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1371D
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| OCR Text |
...hz unit maximum access time 6.5 8.5 ns maximum operating current 210 175 ma maximum cmos standby current 70 70 ma note: 1. for best-practic...1mx 18) cy7c1371d (512k x 36) 119-ball bga pinout a a
cy7c1371d cy7c1373d document #: 38-05556 ... |
| Description |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)流通式SRAM（NoBL结构 18兆位（为512k × 36/1M × 18）流体系结构，通过与总线延迟18 MB的（12k × 36/1M × 18）流通式的SRAM（总线延迟结构）的SRAM
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| File Size |
417.22K /
28 Page |
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it Online |
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