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8.15 Datasheet PDF File

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				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	....94 (.155) 21.21 (.835) 20.70 (.815) 13.84 (.545) 13.58 (.535) 17.96 (.707) 17.70 (.697) Drain 19.05 (0.750) 12.70 (0.500) Source Gate 3.56 (.140) BSC 6.86 (.270) 6.09 (.240) 1.65 (.065) Dia. Typ. 1.39 (.055) 3 Leads 5.08 (.200...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF134
OCR Text	...0.918 0.895 0.867 0.846 0.828 0.815 0.801 0.785 0.784 0.784 0.784 0.783 0.783 0.780 0.774 0.762 0.760 0.758 0.757 0.758 0.757 0.750 0.757 0.766 0.768 0.772 0.772 0.783 0.786 0.795 0.801 0.802 0.805 0.814 S22 - 1.0 - 2.0 - 4.0 - 9.0 - 18...
Description	N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	205.26K / 10 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF137
OCR Text	...0.817 0.814 0.811 0.812 0.813 0.815 0.816 0.817 0.817 0.818 0.820 0.821 0.822 0.823 0.824 0.825 0.827 0.829 0.831 0.836 0.846 0.853 0.853 0.856 0.857 0.861 0.865 0.875 0.881 0.886 0.887 0.888 0.896 0.907 0.910 0.910 0.920 0.938 0.943 0.934 ...
Description	N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	196.56K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	... bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 ...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB] SEMELAB
Part No.	SML40H22
OCR Text	... Dia. 21.21 (0.835) 20.70 (0.815) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 400V 22A ID(cont) RDS(on) 0.180 3.56 (0.140) BSC 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. Pi...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	26.06K / 2 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	SML40H28 SML40H28R1
OCR Text	... Dia. 21.21 (0.835) 20.70 (0.815) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 400V 28A ID(cont) RDS(on) 0.140 3.56 (0.140) BSC 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. Pi...
Description	28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	19.55K / 2 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA803 UPA803T UPA803T-T1
OCR Text	...8.107 7.483 6.775 6.086 5.369 4.815 4.342 3.955 3.618 3.334 3.101 2.899 2.724 2.561 2.428 2.314 2.206 2.114 2.029 1.946 1.875 1.816 1.757 1.708 1.658 1.614 1.570 1.534 1.498 S21 ANG 156.4 140.8 127.9 117.0 107.9 100.7 94.4 89.2 84.3 80.2 76...
Description	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
File Size	56.84K / 8 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZTX1151A
OCR Text	...3 -60 -115 -135 -160 -180 -950 -815 270 250 180 100 450 400 300 190 40 145 40 170 -100 -100 -100 -90 -170 -210 -230 -240 -1050 -950 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=-100A IC=-100A IC=-10mA IC=-100A, VEB...
Description	PNP Low Sat Transistor PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
File Size	68.93K / 4 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	BYT30PI-400 BYT30PI-400RG
OCR Text	....8 16.5 0.622 0.650 20.4 21.1 0.815 0.831 15.1 15.5 0.594 0.610 3.4 3.65 0.134 0.144 4.08 4.17 0.161 0.164 10.8 11.3 0.425 0.444 1.20 1.40 0.047 0.055 4.60 typ. 0.181 typ. Marking: type number Cooling method: by conduction (method C) Wei...
Description	30 A, 400 V, SILICON, RECTIFIER DIODE PLASTIC, DOP3I, 2 PIN Multiconductor Cable; Number of Conductors:3; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Temperature Max:105 C; Voltage Nom.:600V RoHS Compliant: Yes FAST RECOVERY RECTIFIER DIODES FAST RECOVERY RECTIFIER DIODES
File Size	94.23K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	BYT30PI BYT30PI-1000 BYTB30PI-1000 BYT30PI-1000-DOP3I BYT30PI-1000DOP3I
OCR Text	....8 16.5 0.622 0.650 20.4 21.1 0.815 0.831 15.1 15.5 0.594 0.610 3.4 3.65 0.134 0.144 4.08 4.17 0.161 0.164 10.8 11.3 0.425 0.444 1.20 1.40 0.047 0.055 4.60 typ. 0.181 typ. Cooling method: by conduction (method C) Marking: type number Wei...
Description	Very low drop voltage regulators with inhibit FAST RECOVERY RECTIFIER DIODE
File Size	62.91K / 5 Page	View it Online	Download Datasheet

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