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  fe-110 Datasheet PDF File

For fe-110 Found Datasheets File :: 3181    Search Time::1.343ms    
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    NJVMJB44H11T4G

ON Semiconductor
Part No. NJVMJB44H11T4G
OCR Text ...(v ce = 1 vdc, i c = 2 adc) h fe 60 ? ? ? dc current gain (v ce = 1 vdc, i c = 4 adc) 40 ? ? dynamic characteristics collector capacitan...110 100 figure 5. mjb45h11 dc current gain figure 6. mjb44h11 current gain versus temperature figure...
Description Complementary Power Transistors

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    NXP Semiconductors N.V.
Part No. PBSS4520X PBSS4520X-15
OCR Text ...tor pbss4520x features ? high h fe and low v cesat at high current operation ? high collector curre nt capability: i c maximum 5 a ? hi...110 pf 2004 nov 08 8 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) ...
Description 20 V, 5 A NPN low VCEsat (BISS) transistor 20伏,5安NPN型低饱和压降(BISS)晶体管
NPN low VCEsat (BISS) transistor 20 V, 5 A

File Size 118.53K  /  13 Page

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    PBLS6023D

NXP Semiconductors
Part No. PBLS6023D
OCR Text ...= - 5 v; i c =0a - - - 100 na h fe dc current gain v ce = - 2 v; i c = - 100 ma 180 285 - v ce = - 2 v; i c = - 500 ma [1] 150 255 - v ce = ...110 - 170 mv i c = - 1.5 a; i b = - 100 ma [1] - - 165 - 260 mv r cesat collector-emitter saturation...
Description 60 V, 1.5 A PNP BISS loadswitch

File Size 102.78K  /  16 Page

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    Central Semiconductor, Corp.
Part No. CMPTA42E
OCR Text ...) i c =20ma, i b =2.0ma 0.9 v h fe v ce =10v, i c =1.0ma 50 110 105 h fe v ce =10v, i c =10ma 50 110 105 h fe v ce =10v, i c =30ma 50 110 105 f t v ce =20v, i c =10ma, f=100mhz 100 mhz c ob v cb =20v, i e =0, f=1.0mhz 6.0 pf cmpta42e npn ...
Description TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|叩| 350V五(巴西)总裁| 500mA的一(c)| SOT - 23封装

File Size 112.42K  /  2 Page

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    NXP Semiconductors N.V.
Part No. PBSS304ND
OCR Text ... high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb)...110 2 10 (1) (2) (3) v ce (v) 0 2.0 1.6 0.8 1.2 0.4 006aaa712 2 4 6 i c (a) 0 135 120 105 90 75 i b...
Description 80 V, 3 A NPN low VCEsat (BISS) transistor 803安NPN低饱和压BISS)晶体

File Size 151.75K  /  16 Page

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    NXP Semiconductors N.V.
Part No. PBSS305ND
OCR Text ... high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb)...110 2 10 (1) (2) (3) v ce (v) 0 2.0 1.6 0.8 1.2 0.4 006aaa720 2 4 6 i c (a) 0 270 240 210 180 150 i...
Description 100 V, 3 A NPN low VCEsat (BISS) transistor 1003安NPN低饱和压BISS)晶体

File Size 149.40K  /  15 Page

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    PMBTA45

Philips Semiconductors
Part No. PMBTA45
OCR Text ... high collector current gain (h fe ) at high i c n aec-q101 quali?ed 1.3 applications n electronic ballasts n led driver for led chain modul...110 (3) (2) (1) 006aab721 v ce (v) 05 4 23 1 0.2 0.3 0.1 0.4 0.5 i c (a) 0.0 i b (ma) = 70 63 7 14...
Description 150 MA NPN High-voltage Low VCEsat (BISS) Transistor

File Size 121.38K  /  12 Page

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