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hfet Datasheet PDF File

For hfet Found Datasheets File :: 144 Search Time::2.859ms
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				Electronic Theatre Controls, Inc. ETC[ETC] Stanford Microdevices
Part No.	SHF-0186
OCR Text	... surface-mount plastic package. hfet technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0186 is +28 dBm when ...
Description	DC-12 GHz, 0.5 Watt AlGaAs/GaAs hfet 的DC - 12千兆赫，0.5瓦的AlGaAs /砷化镓异质结场效应晶体管 DC-12 GHz 0.5 Watt AlGaAs/GaAs hfet
File Size	158.83K / 4 Page	View it Online	Download Datasheet

				TRIQUINT[TriQuint Semiconductor]
Part No.	TGF4260 TGF4260-EPU
OCR Text	... TGF4260-EPU 9.6mm Discrete hfet q q q q q q 4260 9600 m x 0.5 m Nominal Pout of 37 - dBm at 6.0 GHz Nominal Gain of 9.5 - dB at 6.0 GHz Nominal PAE of 52 % at 6.0 GHz Suitable for high reliability applications 0,572 x 2,324 x ...
Description	9.6mm Discrete hfet
File Size	89.75K / 1 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA8344-SCC
OCR Text	... = VG1 = -0.5 V. For Low Noise, hfet and pHEMT material, VGS = VG1 = -0.25 V. For LNBECOLC, use VGS = VG1 = -0.10 V. VDS fixed at 2.0 V, VGS is swept to bring IDS to 0.5 mA/mm. Drain fixed at ground, source not connected (floating), 1.0 mA/...
Description	2 - 18 GHz Low Noise Amplifier
File Size	496.33K / 11 Page	View it Online	Download Datasheet

				ETC CTS Corporation
Part No.	RT240PD
OCR Text	...rmetically sealed package * GaN hfet Description RT240PD Application * Repeater * RF Sub-Systems * Base Station * Converter * IMT-2000 * ISM * MMDS * Wi-Fi, Wi-max The RT240PD is designed for base stations and cell extenders as cel...
Description	Preliminary 10W Power Transistor
File Size	629.01K / 10 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA1171-SCC
OCR Text	... = VG1 = -0.5 V. For Low Noise, hfet and pHEMT material, VGS = VG1 = -0.25 V. For LNBECOLC, use VGS = VG1 = -0.10 V. VDS fixed at 2.0 V, VGS is swept to bring IDS to 0.5 mA/mm. Drain fixed at ground, source not connected (floating), 1.0 mA/...
Description	36 TO 40 GHZ 1W POWER AMPLIFIER
File Size	882.34K / 9 Page	View it Online	Download Datasheet

				WJ Communication. Inc.
Part No.	FP2189-RFID FP2189-PCB900S FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189
OCR Text	hfet Product Information Product Features * * * * * 50 - 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Product Description The FP2189 is a high performance 1-Watt hfet (Heterostructure FET) i...
Description	1 - Watt hfet
File Size	641.36K / 13 Page	View it Online	Download Datasheet

				TriQuint Semiconductor,Inc. TRIQUINT[TriQuint Semiconductor]
Part No.	TGA8286-EPU TGA8286
OCR Text	...ncy Range, X-band Two Stage 5-W hfet Power Amplifier 37% P.A.E. at 2 to 3 dB Gain Compression 17 dB Small Signal Gain Bias can be applied from either the upper or lower edges 5.384 x 2.997 x 0.1016 mm (0.212 x 0.118 x 0.004 in.) Descript...
Description	8 - 10.5 GHz Power Amplifier
File Size	544.40K / 7 Page	View it Online	Download Datasheet

				Sony Corporation
Part No.	CXG1108K
OCR Text	...sing the Sony's original p-Gate hfet process. Features * Single power supply operation: VDD1 = VDD2 = 3.5V, VGG = 2.95V (@High mode), VGG = 2.7V (@Low mode) * Ultrasmall package: 0.065cc (6.2mm x 6.2mm x 1.7mm) * High efficiency: add = 37.5...
Description	Power Amplifier Module for JCDMA Power Amplifier Module for JCDMA
File Size	68.03K / 6 Page	View it Online	Download Datasheet

				Sony Corporation
Part No.	CXG1156K
OCR Text	...sing the Sony's original p-Gate hfet process. Features * Single power supply operation: VDD1 = VDD2 = 3.5V (High power mode), 1.3V (Low power mode 1), 1.0V (Low power mode 2), VGG = 2.7V * Small package: 0.065cc (6.2mm x 6.2mm x 1.7mm) * Hi...
Description	POWER AMPLIFIER MODULE FOR JCDMA
File Size	80.06K / 6 Page	View it Online	Download Datasheet

For hfet Found Datasheets File :: 144 Search Time::2.859ms
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