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Mitsubishi Electric Corporation
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Part No. |
FL14KM-12A
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OCR Text |
........................... 0.75 G ID ......................................................................................... 14A
GAT...12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25C)
Symbol V (BR) DSS V (BR) GS... |
Description |
Power MOSFETs: FL Series TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 14A I(D) | TO-220FN
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File Size |
40.28K /
2 Page |
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![DSI30-12A DSI30-16A DSI30-08A DSI30-14A DSI30-08AS DSI30-16AS DSI30-12AS](Maker_logo/ixys_corporation.GIF)
IXYS, Corp. IXYS[IXYS Corporation]
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Part No. |
DSI30-12A DSI30-16A DSI30-08A DSI30-14A DSI30-08AS DSI30-16AS DSI30-12AS
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OCR Text |
...5 20 15 10 5
20
0 0 10 20 Id(AV)M 30 A 0 20 40 60 80 100 120 140 C
Tamb
0 0 20 40 60 80 100 120 140 C TC
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180
1.2 K/W 1.0
ZthJC
Fig. 5 Max.... |
Description |
Rectifier Diode 30 A, 1400 V, SILICON, RECTIFIER DIODE, TO-220AC Rectifier Diode 30 A, 1600 V, SILICON, RECTIFIER DIODE, TO-220AC Discrete Rectifier Diodes
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File Size |
49.14K /
2 Page |
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![IRF1405](Maker_logo/international_rectifier.GIF)
International Rectifier
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Part No. |
IRF1405
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OCR Text |
...
S
Benefits
q q q q q q
ID = 169A
Description
Specifically designed for Automotive applications, this Stripe Planar design of HE...12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A... |
Description |
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
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File Size |
114.28K /
9 Page |
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![IRF1407](Maker_logo/international_rectifier.GIF)
International Rectifier
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Part No. |
IRF1407
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OCR Text |
...q q q q q q
RDS(on) = 0.0078 ID = 130AV
Description
Specifically designed for Automotive applications, this Stripe Planar design of H...12a, 12b, 15, 16 4.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A... |
Description |
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
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File Size |
126.10K /
9 Page |
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![FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 FSPYE230 FSPYE230F3 FSPYE230R FSPYE230R3](Maker_logo/intersil_corporation.GIF)
INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 FSPYE230 FSPYE230F3 FSPYE230R FSPYE230R3
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OCR Text |
... . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...12A VGS = 0V to 20V VGS = 0V to 2V ID = 12A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.120 30 10... |
Description |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
82.63K /
8 Page |
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Price and Availability
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