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j.s.t.u.k. Datasheet PDF File

For j.s.t.u.k. Found Datasheets File :: 50284 Search Time::8.828ms
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				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text	...nditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 12kN with mounting c...s A/s A/s V m s mA mA s dI/dt Rate of rise of on-state current VT(TO) rT tgd IL IH tq Th...
Description	Phase Control Thyristor
File Size	108.66K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA125TS120U
OCR Text	...J) RG =15;RG2 = 0 G1 = Ohm T J = 125 C VCC = 720V 100 VGE = 15V 80 350 300 V G E = 2 0V T J = 1 25 C V CE m e a su re d a ...S AFE O P E RA TIN G A R E A 60 150 40 100 20 IC, 50 0 0 50 100 150 200 250 30...
Description	1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
File Size	220.37K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA50TS120U
OCR Text	...V RG1=15;RG2 = 0 RG = Ohm T J = 150 TC = 125C C 140 VGE = 20V T J = 125 oC 120 VCE measured at terminal(Peak Voltage) 100 ...s) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	208.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPBF
OCR Text	...urrent (A) 100 T = 125 C J 100 TJ = 125 C TJ = 25 C V = 15V 80s PULSE WIDTH GE 1.5 2.0 2.5 10 T = 25 C J 1 10 1...S E) Notes: 1. Duty factor D = t 1 / t 2 t 1 t2 0.01 0.0001 2. Peak TJ = PDM x Z thJC +...
Description	Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	GTLP36T612 GTLP36T612G GTLP36T612GX
OCR Text	...dicates word. 1 A B C D E F G H J K L M N P R T U V W 2A2 2A4 2A6 2A8 2A10 2A12 2A14 2A16 2A18 2A1 2A3 2A5 2A7 2A9 2A11 2A13 2A15 2A17 2OEAB...S 6V Note B: For B Port, CL = 30 pF is used for worst case. tPLH/tPHL Open tPHZ/tPZH GND Note A...
Description	36-Bit LVTTL/GTLP Universal Bus Transceiver
File Size	77.84K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1104
OCR Text	...g T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms ...S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14.09 (.55 5) 13.47 (.53 0) ...
Description	Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
File Size	97.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310N
OCR Text	... factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) ...S + V - DD A 400 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 7...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	92.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310S
OCR Text	...5C (unless otherwise specified) J V(BR)DSS V(BR)DSS/TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Cr...S VDS = 50V, ID = 25A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)
File Size	319.11K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	...urrent ( ) 1.5 10.00 T J = 175C (Normalized) T J = 25C RDS(on) , Drain-to-Source On Resistance 1.0 0.5 1.00 2.0 2...s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 0.0 25 50 75 100 125 150...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text	...d Transconductance (S) 200 T J = 25C 150 ID, Drain-to-Source Current () 100 T J = 175C 10 T J = 25C 100 T J = 175C 1 VDS = 25V 60s PULSE WIDTH 0.1 2 4 6 8 10 50 V DS = 10V 380s PULSE WIDTH 0 0 25 50 75 100 125 ...
Description	AUTOMOTIVE MOSFET 汽车MOSFET 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	359.66K / 12 Page	View it Online	Download Datasheet

For j.s.t.u.k. Found Datasheets File :: 50284 Search Time::8.828ms
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