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Infineon
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| Part No. |
HYB25L256160AF-7.5 HYE25L256160AF-7.5
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| OCR Text |
...for concurrent operation ? data mask (dm) for byte control with write and read data ? programmable cas latency: 2 or 3 ? programmable burst ...programmble refresh period ? programmable power reduction feature by pa rtial array activation durin... |
| Description |
Very low Power SDRAM optimized for battery-powered, handheld applications
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| File Size |
795.99K /
56 Page |
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it Online |
Download Datasheet
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Infineon
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| Part No. |
HYB25L256160AC-7.5
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| OCR Text |
...for concurrent operation data mask (dm) for byte control with write and read data programmable cas latency: 2 or 3 programmable burst ...programmble refresh period programmable power reduction feature by partial array activation during... |
| Description |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3
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| File Size |
813.27K /
55 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
HYB25L256160AC HYB25L256160AC-8
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| OCR Text |
...for concurrent operation data mask (dm) for byte control with write and read data programmable cas latency: 2 or 3 programmable burst ...programmble refresh period programmable power reduction feature by partial array activation during... |
| Description |
256-Mbit Mobile-RAM
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| File Size |
818.13K /
55 Page |
View
it Online |
Download Datasheet |
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