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moulding Datasheet PDF File

For moulding Found Datasheets File :: 266 Search Time::1.39ms
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				IRF[International Rectifier]
Part No.	IRFIZ34E IRFIZ34EPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)
File Size	108.13K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFIZ34N IRFIZ34NPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Lsolated Base Power HEX-pak Assembly Half Bridge Configuration Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)
File Size	101.31K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFIZ34V IRFIZ34VPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
File Size	103.27K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLI530N
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET Power MOSFET HEXFET? Power MOSFET
File Size	141.04K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRLI540N
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET Power MOSFET(HEXFET 功率MOS场效应管) HEXFET功率MOSFET（马鞍山的HEXFET功率场效应管 HEXFET? Power MOSFET
File Size	118.97K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFI3205 IRFI3205PBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=64A) HEXFET? Power MOSFET Power MOSFET(Vdss=55V/ Rds(on)=0.008ohm/ Id=64A)
File Size	103.68K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLIZ44N
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET? Power MOSFET
File Size	101.61K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFI1010N IRFI1010
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A) HEXFET? Power MOSFET Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
File Size	105.23K / 8 Page	View it Online	Download Datasheet

For moulding Found Datasheets File :: 266 Search Time::1.39ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |