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  n-channel-enhancement Datasheet PDF File

For n-channel-enhancement Found Datasheets File :: 16794    Search Time::1.937ms    
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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ... Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -25 -100 UNITS A A S Source to Drain Diode Voltage(Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TC = 25oC, ISD = 25A, ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ... Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -6.0 -24 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TC = 25oC, ISD = -6.0...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ... Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -19 -76 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TC = 25oC, ISD = -19A,...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ... Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -3.5 -14 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TC = 25oC, ISD = -3.5...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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    ZVN0117TA

ZETEX[Zetex Semiconductors]
ETC
Part No. ZVN0117TA
OCR Text N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets ZVN0117TA D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tam...
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 41.38K  /  1 Page

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    2N7002-01

DIODES[Diodes Incorporated]
Diodes Inc.
Part No. 2N7002-01
OCR Text N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 A D TOP VIEW B S ...
Description    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 61.72K  /  3 Page

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    2N7002DW

DIODES[Diodes Incorporated]
Part No. 2N7002DW
OCR Text N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Pack...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 64.65K  /  3 Page

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    2N7002LT1 ON0106

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
http://
Part No. 2N7002LT1 ON0106
OCR Text N-Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motorola Preferred Device 3 2 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Drain Current -- Continuous TC = 25C(1) Drain Current -- Continu...
Description CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
From old datasheet system

File Size 92.99K  /  6 Page

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    2N7002T

DIODES[Diodes Incorporated]
Part No. 2N7002T
OCR Text N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 83.69K  /  3 Page

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    2N7002V 2N7002V-7 2N7002VA-7

Diodes Inc.
DIODES[Diodes Incorporated]
Part No. 2N7002V 2N7002V-7 2N7002VA-7
OCR Text N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount P...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 67.17K  /  3 Page

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For n-channel-enhancement Found Datasheets File :: 16794    Search Time::1.937ms    
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