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SamHop Microelectronics
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| Part No. |
STA6610
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| OCR Text |
...f v dd = 15v, i d = 7a, r l=2.1 ohm, v g s = 10v, r g e n = 6 ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =15v, i d = 7a, v g s =10v nc nc nc c f all t ime == = = =7a 2 5 23 ua m ohm m oh... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
115.79K /
6 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics...
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| Part No. |
STG8820
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| OCR Text |
... 1 i gss 10 ua v gs(th) 0.5 v m ohm v gs =4v,i d =7a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =16v , v gs =0v v gs =12v,v ds =0v zero gate voltage drain current gate-body leakage ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
128.66K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STU314D
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| OCR Text |
...=15v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =15v,i d =16a,v gs =10v fall time turn-on delay tim...7a 28 31 40 m ohm c f=1.0mhz c v ds =15v,i d =16a, v gs =10v drain-source diode characteristics and ... |
| Description |
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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| File Size |
269.93K /
11 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STT02N20
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| OCR Text |
...v i d =0.7a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i d =0.7a v ds =10v , i d =0.7a input capacitance output capacitance dynamic characteristics r ds(on) drain-... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
132.69K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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