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SGS Thomson Microelectronics
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| Part No. |
AN900
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| OCR Text |
...to be etched. for instance, the poly gates of a transistor are obtained by etching the poly layer. a second example are the aluminium connec...silicon chips are grouped on a silicon wafer (in the same way postage stamps are printed on a single... |
| Description |
MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY
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| File Size |
488.36K /
15 Page |
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
...wafer crystallography which are poly- crystalline or of a different polytype material than the remainder of the wafer, such as 4h mixed in w...silicon carbide are defined as linear crystallographic defects extending down from the surface of th... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN473
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| OCR Text |
... to the wires (Ls, Ld, Lg), the poly-silicon gate resistance (Rg), the resistance due both to silicon and to bonding (Rs, Rd), the body-drain capacitance modulation (DBD) and the leakage current when the device is in breakdown. Two points n... |
| Description |
A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL
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| File Size |
42.97K /
7 Page |
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ST Microelectronics
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| Part No. |
LIS2L01
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| OCR Text |
...rocess called ThELMA (Thick Epi-Poly layer for Microactuators and Accelerometers) developed by ST to produce inertial sensor and actuator in silicon. The IC interface instead is manufactured using a CMOS process that allow high level of int... |
| Description |
INERTIAL SENSOR
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| File Size |
187.22K /
6 Page |
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ANALOG DEVICES INC
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| Part No. |
ADXL203BE-REEL
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| OCR Text |
...ccelerom eter. they contain a poly s ilicon surface-m i crom achined sensor and signal conditioning circuitry to im plem ent an open loo...silicon wafer. poly silicon springs suspend t h e s t r u c t u r e over the surface of the waf... |
| Description |
SPECIALTY ANALOG CIRCUIT, QCC8
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| File Size |
360.10K /
7 Page |
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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
LIS2L01
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| OCR Text |
...rocess called ThELMA (Thick Epi-Poly layer for Microactuators and Accelerometers) developed by ST to produce inertial sensor and actuator in silicon. The IC interface instead is manufactured using a CMOS process that allow high level of int... |
| Description |
SPECIALTY ANALOG CIRCUIT, PDSO24
INERTIAL SENSOR: 2AXIS/1G LINEAR ACCELEROMETER
INERTIAL SENSOR : 2Axis/1g LINEAR ACCELEROMETER
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| File Size |
60.76K /
6 Page |
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