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				STMicroelectronics
Part No.	STRH8N10
OCR Text	...f states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +1 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -2...
Description	Rad-Hard N-channel 100 V, 6 A Power MOSFET
File Size	476.95K / 18 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STRH40P10
OCR Text	...f states @ t j = 25 c, (co60 rays 100 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +1 a i gss gate body leakage current (v ds = 0) v gs = 12 v v gs = -...
Description	Rad-Hard P-channel 100 V, 34 A Power MOSFET
File Size	379.91K / 18 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STRH40N6
OCR Text	...f states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +20 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -2...
Description	Rad-Hard N-channel 60 V, 30 A Power MOSFET
File Size	419.13K / 16 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STRH100N6
OCR Text	...f states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -...
Description	Rad-Hard N-channel, 60 V, 80 A Power MOSFET
File Size	384.61K / 18 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STRH100N10
OCR Text	...f states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +4 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -2...
Description	Rad-Hard 100 V, 48 A N-channel Power MOSFET
File Size	449.34K / 17 Page	View it Online	Download Datasheet

				TIANMA
Part No.	TM150XG-26L07 TM150XG26L07
OCR Text	...ed to withstand against radiant rays. 6. it is strictly prohibited to copy or publish a part or whole of this document without our prior written approval. revision history date revision no. page descriptions july.2,01 ver. 1 - initial rel...
Description	LCD_Module
File Size	225.50K / 14 Page	View it Online	Download Datasheet

				Hamamatsu Photonics
Part No.	S3901-FX
OCR Text	...as developed for detection of x-rays and electrons. the s3901-fx offers particularly h igh sensitivity to x-rays from 10 k to 100 kev. the phosphor material used is gadolinium ox sulfide (gd 2 o 2 s tb) whose composition is carefully selec...
Description	MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
File Size	136.73K / 3 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STRH100N10FSY01 STRH100N10FSY02 STRH100N10FSY1
OCR Text	...f states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +4 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -2...
Description	48 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
File Size	401.61K / 17 Page	View it Online	Download Datasheet

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