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CMXXX 7805A D123PB SCD12 PM0017 ELECTRIC S9015 MC10125L
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  recombination Datasheet PDF File

For recombination Found Datasheets File :: 136    Search Time::1.766ms    
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    IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-STRL

IRF[International Rectifier]
Part No. IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-STRL
OCR Text ...es and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300kHz) D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C...
Description 600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB

File Size 150.13K  /  9 Page

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    IRG4BC20W

IRF[International Rectifier]
Part No. IRG4BC20W
OCR Text ...es and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ T C...
Description 600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)

File Size 128.24K  /  8 Page

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    IRG4PF50W

International Rectifier
Part No. IRG4PF50W
OCR Text ...due to minimal minority-carrier recombination coupled with low onstate losses allow maximum flexibility in device application TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 2...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 125.36K  /  8 Page

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    IRG4PC30W IRG4PC30WPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PC30W IRG4PC30WPBF
OCR Text ...es and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ T C...
Description Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package

File Size 122.11K  /  8 Page

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    IRG4PC50W IRG4PC50WPBF

IRF[International Rectifier]
Part No. IRG4PC50W IRG4PC50WPBF
OCR Text ...es and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz) TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ T C ...
Description 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

File Size 154.00K  /  8 Page

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    IRG4IBC20W

IRF[International Rectifier]
Part No. IRG4IBC20W
OCR Text ...es and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220 FULLPAK Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV ...
Description 600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR

File Size 152.11K  /  8 Page

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For recombination Found Datasheets File :: 136    Search Time::1.766ms    
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