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GPJ10D XHXXXX 317AET ISL88001 03100 P1402 FFCKS3L1 LTM455DU
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For recovery Found Datasheets File :: 80761    Search Time::2.125ms    
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    SSDI
Part No. SDR7RF SDR7PF SDR7TF
OCR Text ... recovery time f =fast recovery (200 ns max) voltage/family p = 1300v r = 1400v t = 1500v sdr7pf thru sdr7tf series 7.0 amp fast recov...
Description (SDR7PF - SDR7TF) FAST recovery RECTIFIER

File Size 156.55K  /  2 Page

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
Part No. IRF054
OCR Text ... avalanche energy cd peak diode recovery dv/dt <d operating junction storage temperature range lead temperature weight 45* 3 1 220 150 1.2 20 480 - - 4,5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) ll.s(typical) units a w w/c v mj ...
Description 60V, N-CHANNEL

File Size 93.80K  /  2 Page

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    AUK
Part No. SMK1060PS
OCR Text ...0v, i s =10a - - 1.4 v reverse recovery time t rr - 470 - ns reverse recovery charge q rr i s =10a, v gs =0, di s /dt=100a/ us - 6 - uc note ; repetitive rating : pulse width limited by maximum junction temperatu...
Description Advanced N-Ch Power MOSFET

File Size 1,694.38K  /  34 Page

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    ST Microelectronics
Part No. STP130NH02L
OCR Text ...0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 90 a di/dt = 100a/s v dd = 15 v t j = 150c (see test circuit, figure 5) 47 58 2.5 ns nc a electrical characteristics (continued) figur...
Description N-channel Power MOSFET

File Size 343.23K  /  13 Page

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    ST Microelectronics
Part No. MTP3055E
OCR Text ...2a,v gs =0 2v t rr q rr reverse recovery time reverse recovery charge i sd = 12 a, di/dt = 100 a/s, v dd =30v,t j = 150c 65 0.17 ns c safe operating area thermal impedance mtp3055e 4/8 static drain-source on resistance transconductance ou...
Description N-CHANNEL 60V - 0.1 OHM - 12A TO-220 STRIPFET POWER MOSFET

File Size 278.11K  /  8 Page

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    TY Semicondutor
Part No. AO3421
OCR Text ... rr 4.4 nc body diode reverse recovery charge i f =-2.6a, di/dt=100a/ m s turn-on rise time turn-off delaytime turn-off fall time turn-on delaytime dynamic parameters total gate charge v gs =-10v, v ds =-15v, i d =-2.6a gate source charge...
Description Single P -Channel MOSFET

File Size 336.35K  /  5 Page

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    AO3421 AO342111 AO3421-11

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AO3421 AO342111 AO3421-11
OCR Text ...hout notice. body diode reverse recovery charge i f =-2.6a, di/dt=100a/ m s turn-on rise time turn-off delaytime turn-off fall time turn-on delaytime dynamic parameters total gate charge v gs =-10v, v ds =-15v, i d =-2.6a gate source charge...
Description 30V P-Channel MOSFET

File Size 231.74K  /  5 Page

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For recovery Found Datasheets File :: 80761    Search Time::2.125ms    
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