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  rg-122 u Datasheet PDF File

For rg-122 u Found Datasheets File :: 594    Search Time::1.672ms    
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    APT50M65 APT50M65B2FLL APT50M65LFLL

ADPOW[Advanced Power Technology]
Part No. APT50M65 APT50M65B2FLL APT50M65LFLL
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 67 268 1.3 5 270 540 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.95K  /  2 Page

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    APT8020B2FLL APT8020LFLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2FLL APT8020LFLL
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 38 132 1.3 18 320 650 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.72K  /  2 Page

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    APT8020B2LL APT8020LLL APT6029BLL APT6029SLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2LL APT8020LLL APT6029BLL APT6029SLL
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6W MIN TYP MAX uNIT 5175 975 170 190 25 123 12 14 38 8.8 ns nC pF Gate-Source Charge Gate-Drai...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.99K  /  2 Page

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    APT8024B2FLL APT8024LFLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2FLL APT8024LFLL
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 31 124 1.3 18 300 600 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.10K  /  2 Page

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    APT8024B2LL APT8024LLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2LL APT8024LLL
OCR Text ... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 31 124 1.3 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 57.21K  /  2 Page

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    APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 33 132 1.3 5 (VG...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 2...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 33A 0.240 Ohm

File Size 39.43K  /  2 Page

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    APT8024B2VR APT8024LVR

ADPOW[Advanced Power Technology]
Part No. APT8024B2VR APT8024LVR
OCR Text ... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX uNIT Amps Volts ns C ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 2...
Description POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 38.06K  /  2 Page

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    APT8030LVFR APT8030LVFRG

Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8030LVFR APT8030LVFRG
OCR Text ... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 n...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69...
Description POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 62.47K  /  4 Page

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    APT8030LVR

ADPOW[Advanced Power Technology]
Part No. APT8030LVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns n...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69...
Description POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.26K  /  4 Page

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    GA600HD25S

IRF[International Rectifier]
Part No. GA600HD25S
OCR Text ...E = 15V TJ = 25 C I C = 600A RG = 15; RG2 = 0 V GE = 15V V CC = 150V I C = 1000A 140 IC = 600A 130 100 I C = 300A 120 110 0 10 20 30 40 50 10 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 RG , Gate Resistance ...
Description 250V DC-1 kHz (Standard) Single IGBT in a Dual INT-A-Pak package
Standard Speed IGBT

File Size 625.24K  /  10 Page

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