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si-rectifier Datasheet PDF File

For si-rectifier Found Datasheets File :: 1628 Search Time::1.906ms
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				IRF[International Rectifier]
Part No.	IRHN7450SE
OCR Text	...cifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of survi...Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in t...
Description	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
File Size	80.82K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8450 IRHM7450
OCR Text	...ion doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gat...
Description	RADIATION HARDENED POWER MOSFET REPETITIVE AVALANCHE AND dv/dt RATED
File Size	307.49K / 12 Page	View it Online	Download Datasheet

				http:// IRF[International Rectifier]
Part No.	IRLML2402 IRLML6302 IRLML6402 IRLML5103 IRLML2803
OCR Text	...& T O L E R A N C IN G P ER A N SI Y1 4.5M -1 982. 2 . C O N TR O LLIN G D IM E N S IO N : IN C H . 3 D IM EN SIO N S D O N O T IN C LU D E M O LD F LA SH . 0.95 ( .037 ) 2X Part Marking Information Micro3TM TM E XA M P L E : T H IS...
Description	HEXFET Power MOSFET Power MOSFET(Vdss=-30V Rds(on)=0.60ohm)
File Size	80.72K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	10CTQ150 10CTQ150-1 10CTQ150S 10CTQ150STRL 10CTQ150STRR
OCR Text	... r pulse dura tio n (sec ond s) si n g l e pu l se ( th e r m a l re si st a n c e ) 1 thermal im peda nc e z (c/ w) notes: 1. ...rectifier lot code assembly example: in the assembly line "c" lot code 1789 date code part num b log...
Description	Multiconductor Cable; Leaded Process Compatible:Yes RoHS Compliant: Yes 150V 10A Schottky Common Cathode Diode in a TO-220AB package 150V 10A Schottky Common Cathode Diode in a TO-262 package 150V 10A Schottky Common Cathode Diode in a D2-Pak package SCHOTTKY RECTIFIER 10 Amp Shielded Paired Cable; Number of Conductors:4; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:FEP; Number of Pairs:2; Leaded Process Compatible:Yes; Features:Aluminium Foil Polyester Tape RoHS Compliant: Yes 肖特基整流器10安培
File Size	142.83K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF7601 IRF7601TR
OCR Text	...G A ND TO LER AN C IN G P ER AN SI Y14.5M -1982. 2 C ON T RO LLIN G D IM EN SION : IN C H. 3 D IM E N SIO NS DO NO T IN CL UD E M O LD F LAS H. 0 . 65 6 X ( .0 2 56 ) Part Marking Information Micro8 D A T E C O DE (YW W ) A Y = L A ...
Description	20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=20V, Rds(on)=0.035ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管） N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
File Size	110.37K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7603
OCR Text	...D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = 3.7A I D , D r ain- to-S ourc e C urre nt (A ) 1.5 T J = 1 5 0 C 1.0 1 0.5 0.1 3.0 3.5 4.0 VD S = 1 0 V 2 0 s PU L SE W ID TH 4.5 5.0 5.5 ...
Description	30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
File Size	107.39K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7606
OCR Text	...D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = -2.7A -I D , D rain -to- S our ce C urr ent ( A ) 1.5 TJ = 2 5 C 10 TJ = 15 0 C 1.0 0.5 1 V DS = -1 0 V 2 0 s P U L S E W ID T H 3.0 3.5 4....
Description	Power MOSFET(Vdss=-30V/ Rds(on)=0.09ohm) Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)
File Size	95.99K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	12CWQ04FN
OCR Text	...ing le pulse ( th e r m a l re si st a n c e ) 1 thermal impeda nce z (c/ w) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 j dm...rectifier logo lot code assembly international part number date code year 0 = 2000 week 12 line a ...
Description	SCHOTTKY RECTIFIER
File Size	168.02K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM7460SE
OCR Text	...cifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of survi...Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in t...
Description	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)
File Size	99.74K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFZ24L IRFZ24NS IRFZ24NSTRR IRFZ24NSTRL IRFZ24NL IRZ24NS
OCR Text	...D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = 17 A I D , D rain -to- S ou rce C ur ren t (A ) 2.5 TJ = 2 5 C T J = 1 7 5 C 2.0 10 1.5 1.0 0.5 1 4 5 6 7 V DS = 2 5 V 2 0 s P U L SE W...
Description	(159.21 k) 59.21十一 Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.07ohm，身份证\u003d 17A条） 55V,17A,N-Channel HEXFET Power MOSFET(55V,17A,N沟道 HEXFET功率MOS场效应管) 55V的，17A条，N沟道HEXFET功率MOSFET5V的，17A条，沟道的HEXFET功率马鞍山场效应管） 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	155.28K / 10 Page	View it Online	Download Datasheet

For si-rectifier Found Datasheets File :: 1628 Search Time::1.906ms
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