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NTE[NTE Electronics]
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Part No. |
NTE5705 NTE5700 NTE5702 NTE5701 NTE5703 NTE5704
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Description |
Industrial power module. Hybrid doubler. Max repetitive peak reverse voltage Vrrm = 1200V. Industrial power module. SCR AC switch. Max repetitive peak reverse voltage Vrrm = 1200V. Industrial power module. Single phase, all SCR bridge. Max repetitive peak reverse voltage Vrrm = 1200V. Industrial power module. Single phase, hybrid bridge, common anode, freewheeling diode. Max repetitive peak reverse voltage Vrrm = 1200V.
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File Size |
60.29K /
4 Page |
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NTE[NTE Electronics]
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Part No. |
NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NTE5868 NTE5867 NTE5860 NTE5857 NTE5858 NTE5851 NTE5852 NTE5853 NTE5854 NTE5855 NTE5856 NTE5859
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Description |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
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File Size |
23.18K /
2 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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Part No. |
SC261 SC260 SC2603 SC260D SC260M SC260M3 SC261B SC261D SC261M
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Description |
Triac. Bidirectional triode thyristor. 25A RMS. repetitive peak off-state voltage 200 V. Triac. Bidirectional triode thyristor. 25A RMS. repetitive peak off-state voltage 600 V. Triac. Bidirectional triode thyristor. 25A RMS. repetitive peak off-state voltage 400 V. Triacs Bidirectional Triode Thyristors
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File Size |
90.74K /
2 Page |
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it Online |
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TY Semiconductor Co., L...
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Part No. |
BAR43A
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Description |
Fast switching Verylow turn-on voltage Maximum repetitive Reverse voltage 30V
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File Size |
194.55K /
2 Page |
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it Online |
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Part No. |
stIP4006 stI2006 stIP3006 stI2506 stIP2506 stIP1506
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Description |
Triac; Triac Type:standard; Peak repetitive Off-state voltage, Vdrm:200V; On-state RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Transient Surge Protection Thyristor; Package/Case:DO-214AA; repetitive Reverse voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-state Saturation voltage:4V Triac; Triac Type:standard; Peak repetitive Off-state voltage, Vdrm:200V; On-state RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA TRANSIstOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66 Triac; Triac Type:standard; Peak repetitive Off-state voltage, Vdrm:200V; On-state RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA TRANSIstOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
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File Size |
162.26K /
1 Page |
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NTE[NTE Electronics]
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Part No. |
NTE5825 NTE5818 NTE5819 NTE5823
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Description |
Silicon power rectifier. stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. Silicon Power Rectifier stud Mount, Fast Recovery, 12 Amp Silicon Power Rectifier stud Mount Fast Recovery 12 Amp Silicon power rectifier. stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
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File Size |
17.84K /
2 Page |
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it Online |
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Price and Availability
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