| |
|
 |
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| Part No. |
STS8NFS30L
|
| OCR Text |
...esistance Junction-ambientSCHOT tky Storage T emperature Range Maximum Junction Temperature (*) mounte d on FR-4 board (ste ady stat e) 50 100 -65 to 150 150
o o
C/W C/W o C o C
MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless... |
| Description |
N - CHANNEL 30V - 0.018ohm - 8A S0-8 STripFET MOSFET PLUS SCHOTtky RECTIFIER -通道30V 0.018ohm - 8A条的S0 - 8 STripFET肖特基整流器MOSFET的普乐士
N - CHANNEL 30V - 0.018ohm - 8A S0-8 STripFET MOSFET PLUS SCHOTtky RECTIFIER
N - CHANNEL 30V - 0.018 Ohm - 8A S0-8 STripFET MOSFET PLUS SCHOTtky RECTIFIER
|
| File Size |
83.70K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
VISHAY INTERTECHNOLOGY INC
|
| Part No. |
12CTQ045-1TRR
|
| OCR Text |
...n the 12ctq... center tap schot tky rectifier series has been optimized for low reverse leak age at high temperature. the proprietary barrier technology allows for reliable operation up to 175 c junction temperature. typical applications ar... |
| Description |
6 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA
|
| File Size |
112.83K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
AGILENT TECHNOLOGIES INC
|
| Part No. |
HSCH-9201TC494
|
| OCR Text |
...dvanced gallium arsenide schot- tky barrier diodes. these devices are fabricated utilizing molecular beam epitaxy (mbe) manufactur- ing techniques and feature rug- ged construction and consistent electrical performance. a polyim- ide coa... |
| Description |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
| File Size |
42.47K /
4 Page |
View
it Online |
Download Datasheet |
|
For
tky Found Datasheets File :: 27 Search Time::1.359ms
Page :: | 1 | <2> | 3 | |
▲Up To
Search▲ |
|
Price and Availability
|
