0000'>tmos 0000'>7 E-0000'>fet High Energy 0000'>power 0000'>fet N-Channel Enhancement-Mode Silicon Gate 0000'>tmos 0000'>7 E-0000'>fet High Energy 0000'>power 0000'>fet From old datasheet system 0000'>tmos 0000'>power 0000'>fet 10 amperes 600 VOLTS
0000'>tmos 0000'>7 E-0000'>fet High Energy 0000'>power 0000'>fet 0000'>tmos 0000'>7 E-0000'>fet High Energy 0000'>power 0000'>fet N-Channel Enhancement-Mode Silicon Gate From old datasheet system 0000'>tmos 0000'>power 0000'>fet 10 amperes 600 VOLTS
0000'>tmos 0000'>power 0000'>fet 20 amperes 60 VOLTS RDS(on) = 0.080 OHM 0000'>tmos是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆 From old datasheet system 0000'>tmos V 0000'>power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate