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  to247-4 Datasheet PDF File

For to247-4 Found Datasheets File :: 333    Search Time::2.578ms    
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    ST Microelectronics
Part No. STC03DE170HP
OCR Text ...packing stc03de170hp c03de170hp to247-4l hp tube stc03de170hp hybrid emitter switched bipolar transistor esbt ? 1700v - 3a - 0.55 w gener...4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Hybrid emitter switched bipolar transistor

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    IPW60R075CP

Infineon Technologies AG
Part No. IPW60R075CP
OCR Text ... g,typ 650 0.075 87 V nC PG-TO247-3 CoolMOS CP is designed for: * Hard switching SMPS topologies for Server and Telecom Type IPW60...4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 26 117 15 V/ns Unit A Parameter Symbol...
Description
File Size 531.56K  /  11 Page

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    ST Microelectronics
Part No. STC12IE90HV
OCR Text ...E90HV Marking C12IE90HV Package to247-4L HV Packaging Tube January 2007 This is preliminary information on a new product now in develo...4 1/11 www.st.com 11 STC12IE90HV Contents 1 2 Electrical ratings . . . . . . . . . . . ....
Description Emitter Switched Bipolar Transistor

File Size 247.73K  /  11 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. SBW3320
OCR Text ...320 sbw3320 to3p to3p to3p to3p to247 to247 to247 to247 sbw3320 sbw3320 sbw3320 sbw3320 w w w w 2 / 7 steady, steady, steady, steady, keep...4 - - 6 0.8 ? tf fall time f t current gain band with prouct vce=10 v , ic=0.5a 4 mhz note: note: no...
Description High Voltage Fast-Switching NPN Power Transistor

File Size 580.61K  /  7 Page

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    ST Microelectronics
Part No. STC08DE150
OCR Text ...n) 0.6 v 8 a 0.075 w to247-4l electrical symbol device structure part number marking package packaging stc08de150 c08de...4: thermal data table 5: electrical characteristics (t case = 25 o c unless otherwise specified) ...
Description HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR

File Size 289.61K  /  9 Page

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    STC03DE170HP07 STC03DE170HP

ST Microelectronics
STMicroelectronics
Part No. STC03DE170HP07 STC03DE170HP
OCR Text ...ry low CISS driven by RG = 47 to247-4L HP Applications Aux SMPS for three phase mains Figure 1. Internal schematic diagrams ...4. Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS) VCS(ON) hFE VBS(ON) VGS(th) Ciss QGS(tot) Electrical c...
Description Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W

File Size 256.65K  /  9 Page

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    Infineon Technologies
Part No. IPW60R165CP
OCR Text ...ing code marking ipw60r165cp pg-to247-3-1 sp000095483 6r165p pg-to247-3-1 rev. 2.0 page 1 2006-06-19 ipw60r165cp maximum ratings, a...4) d v /d t 15 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal ...
Description CoolMOS Power Transistor

File Size 388.28K  /  10 Page

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    MBR3045WT-D

ON Semiconductor
Part No. MBR3045WT-D
OCR Text ... junction temperature ? popular to247 package mechanical characteristics: ? case: epoxy, molded ? weight: 4.3 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead tempera...
Description SWITCHMODE Power Rectifier

File Size 62.56K  /  4 Page

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    IPW50R350CP

Infineon Technologies AG
Part No. IPW50R350CP
OCR Text ...x Q g,typ 550 0.350 19 V nC TO247-3-1 CoolMOS CP is designed for: * Hard- & soft switching SMPS topologies * CCM PFC for Lamp Ballast...4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 5.6 22 15 V/ns Unit A Parameter Symbol...
Description CoolMOSTM Power Transistor Features Ultra low gate charge Extreme dv/dt rated

File Size 529.79K  /  11 Page

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    PBYR7025WT PBYR7020WT PBYR7025WT-25

Philips Semiconductors
NXP Semiconductors
Part No. PBYR7025WT PBYR7020WT PBYR7025WT-25
OCR Text ...O(AV) = 70 A VF 0.46 V SOT429 (TO247) DESCRIPTION a1 1 k2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diode...4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj Forward dissipation, PF (W...
Description Rectifier diodes Schottky barrier(肖特基势垒整流二极管)

File Size 51.00K  /  5 Page

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