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  vgdo Datasheet PDF File

For vgdo Found Datasheets File :: 363    Search Time::3.204ms    
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    BF245C BF245B BF245A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BF245C BF245B BF245A
OCR Text ...ng System (IEC 134). SYMBOL VDS vgdo VGSO ID IG Ptot Tstg Tj Note PARAMETER drain-source voltage gate-drain voltage gate-source voltage drain current gate current total power dissipation storage temperature operating junction temperature up...
Description N-channel silicon field-effect transistors

File Size 96.99K  /  11 Page

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    STK596EF

AUK[AUK corp]
Part No. STK596EF
OCR Text ...re range (Ta=25C) Symbol vgdo IG ID PD TJ Tstg Rating -20 10 1 100 150 -55~150 Unit V mA mA mW C C Electrical Characteristics Characteristic Gate-drain breakdown voltage Cutoff voltage Zero Voltage Drain current Forward ...
Description N-Channel Junction FET

File Size 338.98K  /  5 Page

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    STK596K

AUK[AUK corp]
Part No. STK596K
OCR Text ...re range (Ta=25C) Symbol vgdo IG ID PD TJ Tstg Rating -20 10 1 100 150 -55~150 Unit V mA mA mW C C Electrical Characteristics Characteristic Gate-drain breakdown voltage Cutoff voltage Zero Voltage Drain current Forward ...
Description N-Channel Junction FET

File Size 343.58K  /  5 Page

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    STK596M

AUK[AUK corp]
Part No. STK596M
OCR Text ...re range (Ta=25C) Symbol vgdo IG ID PD TJ Tstg Rating -20 10 1 100 150 -55~150 Unit V mA mA mW C C Electrical Characteristics Characteristic Gate-drain breakdown voltage Cutoff voltage Zero Voltage Drain current Forward ...
Description N-Channel Junction FET

File Size 339.38K  /  5 Page

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    STK596SF

AUK[AUK corp]
Part No. STK596SF
OCR Text ...re range (Ta=25C) Symbol vgdo IG ID PD TJ Tstg Rating -20 10 1 100 150 -55~150 Unit V mA mA mW C C Electrical Characteristics Characteristic Gate-drain breakdown voltage Cutoff voltage Zero Voltage Drain current Forward ...
Description N-Channel Junction FET

File Size 339.16K  /  5 Page

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    STK596UF

AUK[AUK corp]
Part No. STK596UF
OCR Text ...re range (Ta=25C) Symbol vgdo IG ID PD TJ Tstg Rating -20 10 1 100 150 -55~150 Unit V mA mA mW C C Electrical Characteristics Characteristic Gate-drain breakdown voltage Cutoff voltage Zero Voltage Drain current Forward ...
Description N-Channel Junction FET

File Size 339.51K  /  5 Page

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    MGF1801 MGF1801B 1801B

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1801 MGF1801B 1801B
OCR Text ...AXIMUM RATINGS (Ta=25C) Symbol vgdo VGSO ID IGR IGF PT Tch Tstg *1:TC=25C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storag...
Description TAPE CARRIER MICROWAVE POWER GaAs FET
From old datasheet system

File Size 22.22K  /  3 Page

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    2SK3396

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3396
OCR Text ...e Storage temperature Symbol vgdo VGSO IG ID PD Tch Tstg Rating -40 -40 10 1 100 125 -55 to +125 Unit V V mA mA mW C C 1: Source 2: Drain 3: Gate SSSMini3-F1 Package Marking Symbol: EB Electrical Characteristics Ta = 25C ...
Description Silicon N-Channel Junction FET

File Size 64.47K  /  3 Page

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    KTK211

Korea Electronics (KEC)
KEC(Korea Electronics)
KEC Holdings
Part No. KTK211
OCR Text ... Temperature Range ) SYMBOL vgdo IG PD Tj Tstg RATING -18 10 150 150 -55 150 UNIT V mA mW K DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.0...
Description FM RF,AM RF,VHF Band Amp.
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER)
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) N通道结FIFLD EFFFCT晶体管(高频,甚高频波段放大器)

File Size 399.26K  /  3 Page

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    MGF4916 MGF4916G MGF4919G MGF491XG 491XG MGF491XGSERIES

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF4916 MGF4916G MGF4919G MGF491XG 491XG MGF491XGSERIES
OCR Text ...AXIMUM RATINGS (Ta=25C) Symbol vgdo VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -4 -4 60 50 125 -65 to +125 Unit V V mA mW...
Description SUPER LOW NOISE InGaAs HEMT
From old datasheet system

File Size 18.48K  /  3 Page

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For vgdo Found Datasheets File :: 363    Search Time::3.204ms    
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