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    AT93C46B AT93C46B-10PC AT93C46B-10PC-2.5 AT93C46B-10PC-2.7 AT93C46B-10PI AT93C46B-10PI-2.5 AT93C46B-10PI-2.7 AT93C46B-10

Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
Part No. AT93C46B AT93C46B-10PC AT93C46B-10PC-2.5 AT93C46B-10PC-2.7 AT93C46B-10PI AT93C46B-10PI-2.5 AT93C46B-10PI-2.7 AT93C46B-10SC AT93C46B-10SC-2.5 AT93C46B-10SC-2.7 AT93C46B-10SI AT93C46B-10SI-2.5 AT93C46B-10SI-2.7
OCR Text x16 Organization Utilizing "No Connects" for Pins 6 and 7 * Low Voltage and Standard Voltage Operation - 5.0 (VCC = 4.5V to 5.5V) - 2.7 (VCC = 2.7V to 5.5V) - 2.5 (VCC = 2.5V to 5.5V) 3-Wire Serial Interface 2 MHz Clock Rate (5V) Compatibi...
Description 3-Wire Serial E2PROMs 3线串行E2PROMs

File Size 142.88K  /  10 Page

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    IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S1680

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES * Clock frequency: 166,143,100 MHz * Fully synchronous; all signals referenced to a positive clock edge * Internal bank for hiding row access/precharge * Power supply IS42S81600A IS42S168...
Description 16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

File Size 534.78K  /  61 Page

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...C-Y,P K9F5616U0C-D,H 2.7 ~ 3.6V x16 X8 2.4 ~ 2.9V x16 Vcc Range 1.70 ~ 1.95V Organization X8 x16 X8 TSOP1 TBGA TSOP1 TBGA TSOP1 TBGA WSOP1 TSOP1 TBGA PKG Type TBGA FEATURES * Voltage Supply - 1.8V device(K9F56XXQ0C) : 1.70~1.95V - 2.65V...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ...al issue. At Read2 operation in x16 device : A3 ~ A7 are Don' care ==> A3 ~ A7 are "L" t 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. WP pin ...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ...C-Y,P K9F5616U0C-D,H 2.7 ~ 3.6V x16 X8 Vcc Range 1.70 ~ 1.95V Organization X8 x16 TSOP1 TBGA WSOP1 TSOP1 TBGA PKG Type TBGA FEATURES * Voltage Supply - 1.8V device(K9F56XXQ0C) : 1.70~1.95V - 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V * Organ...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5PS12821F-Y6
OCR Text ...ov.2002 corrected typos, add x16 part and update package dimensions 0.53 dec.2002 page1,6,7,29 corrected typos and delete page29 tras programming definition 0.6 apr.2003 page9,10 changed package dimensions changed part number ...
Description 64M X 8 DDR DRAM, PBGA60

File Size 885.74K  /  67 Page

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Part No. MT48LC8M16TG-8ITG MT48V8M16TG-8G
OCR Text x16, x32 mobile sdram synchronous dram mt48lc8m16lff4, mt48v8m16lff4, mt48lc8m16tg, mt48v8m16tg, mt48v8m16p, mt48lc4m32lff5, mt48v4m32lff5 features ? temperature compensated self refresh (tcsr) ? fully synchronous; all signals registere...
Description 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54

File Size 6,168.33K  /  69 Page

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    UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9JF UPD45128163G5-A10B UPD45128163G5-A10B-9JF UPD45128163G5-A75 UPD45128

NEC[NEC]
Part No. UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9JF UPD45128163G5-A10B UPD45128163G5-A10B-9JF UPD45128163G5-A75 UPD45128163G5-A75-9JF UPD45128163G5-A80 UPD45128163G5-A80-9JF UPD45128441 UPD45128441G5-A10 UPD45128441G5-A10-9JF UPD45128441G5-A10B UPD45128441G5-A10B-9JF UPD45128441G5-A75 UPD45128441G5-A75-9JF UPD45128441G5-A80 UPD45128441G5-A80-9JF UPD45128841 UPD45128841G5-A10 UPD45128841G5-A10-9JF UPD45128841G5-A10B UPD45128841G5-A10B-9JF UPD45128841G5-A75 UPD45128841G5-A75-9JF UPD45128841G5-A80 UPD45128841G5-A80-9JF
OCR Text ...3) and BA1(A12) * Byte control (x16) by LDQM and UDQM * Programmable Wrap sequence (Sequential / Interleave) * Programmable burst length (1, 2, 4, 8 and full page) * Programmable /CAS latency (2 and 3) * Automatic precharge and controlled p...
Description 128M-bit Synchronous DRAM 4-bank, LVTTL

File Size 1,081.23K  /  92 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS42SM32400E-75EBLI
OCR Text ...q = 2.5 v packages: ? x8 / x16 Ctsop ii (54), bga (54) [x16 only] x32 C tsop ii (86), bga (90) temperature range: ? commercial (0c to +70c) industrial (C40 oc to 85 oc) die revision: e ? parameter 16m x 8 8m x 16 4m x 32 confg...
Description 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90

File Size 764.69K  /  26 Page

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