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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDH8436
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| Description |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A voltage Vgs th max. 4.5 V voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
293.10K /
6 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDH854P
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| Description |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A voltage Vgs th max. 4.5 V voltage Vds max 30 V
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
84.65K /
8 Page |
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it Online |
Download Datasheet |
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VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
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| Part No. |
2N4118A SST4119 2N4117A 2N4119A PN4117A PN4118A PN4119A SST4117 SST4118
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| Description |
N-Channel JFETs
IC FTDI2232L USB/SERIAL 48-LQFP
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
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| File Size |
59.13K /
5 Page |
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Download Datasheet |
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Vishay Siliconix
Vishay Intertechnology,Inc.
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| Part No. |
2N5484 2N5485 2N5486 SST5484 SST5485 SST5486
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| Description |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
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| File Size |
52.89K /
7 Page |
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it Online |
Download Datasheet |
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TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
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| Part No. |
IRFN140SMD
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| Description |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, power, MOSFET
N-Channel power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
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| File Size |
22.23K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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