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Infineon
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| Part No. |
21N50C3
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| OCR Text |
... ar limited by t jmax 2) i d =21a, v dd =50v e ar 1 avalanche current, repetitive t a r limited by t j max i ar 21 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 208 w spb ... |
| Description |
Search --To SPB21N50C3
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| File Size |
502.05K /
12 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTC80A10SCTG
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| OCR Text |
...C 2.1
Typ
VGS = 10V, ID = 21A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V
3
Max 75 750 100 3.9 175
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characterist... |
| Description |
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
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| File Size |
307.29K /
7 Page |
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it Online |
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SEMELAB LTD
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| Part No. |
IRFN5210
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| OCR Text |
...= -25v, l = 3.1mh, peak i l = -21a, starting t j = 25c, r g = 25 (3) @ i sd -21a, di/dt -480a/s, v dd -100v, t j 175c (4) pulse width 300us, 2%
p-channel power moset irfn5210 semelab limited se... |
| Description |
34 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB
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| File Size |
452.99K /
3 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT6030SVFR APT6030BVFR APT6030BVFR_05 APT6030BVFR05
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| OCR Text |
21A
0.300
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Powe... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
136.00K /
4 Page |
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it Online |
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Price and Availability
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