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  0.05w Datasheet PDF File

For 0.05w Found Datasheets File :: 479    Search Time::1.984ms    
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    BAP64-05W

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BAP64-05W
OCR Text ...50 mA VR = 100 V VR = 20 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; ...05W TYP. MAX. UNIT 0.95 - - 0.52 0.37 0.23 20 10 2 0.7 1.55 1.1 10 1 - - 0.35 40 20 3...
Description Silicon PIN diode 硅PIN二极
Silicon PIN diode(硅PIN二极

File Size 55.87K  /  8 Page

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    BAP50-05W

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAP50-05W
OCR Text ... 50 mA IR = 10 A VR = 50 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; n...05W TYP. MAX. UNIT 0.95 - - 0.45 0.35 0.3 25 14 3 19 15.7 13.5 1.84 1.90 1.92 1.08 1.13 ...
Description General purpose PIN diode

File Size 55.61K  /  8 Page

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    SIEMENS AG
Part No. BAS40-05W
OCR Text ...cs 5 diode capacitance v r = 0 v, f = 1 mhz pf - 3 c t - charge carrier life time i f = 25 ma ps 10 - differential forward resistance i f = 10 ma, f = 10 khz ? - r f - 10 series inductance l s - 2 - nh bas 40w... oct-07-1999 ...
Description Silicon Schottky Diode(肖特基硅二极

File Size 90.67K  /  4 Page

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    BAR63-05W BAR63-02W

Infineon Technologies AG
Part No. BAR63-05W BAR63-02W
OCR Text ...on anode common anode LS(nH) 0.4 0.6 0.6 1.8 1.8 1.4 1.8 1.4 1.8 1.4 Marking G G GG G G4s G4s G5s G5s G6s G6s package may be available upon special request 1 2007-04-19 BAR63... Maximum Ratings at TA = 25C, unless otherw...
Description Silicon PIN Diodes

File Size 178.81K  /  16 Page

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    SIEMENS AG
Part No. BAR64-05W BAR64-04W BAR64-06W
OCR Text ...nted on alumina 15mm x 16.7mm x 0.7mm bar 64 ... w mar-21-2000 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (b...
Description Silicon PIN Diodes(硅型PIN二极

File Size 84.87K  /  4 Page

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    BAP50-05W BAP50

Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
Part No. BAP50-05W BAP50
OCR Text ...LS 1.05 1.6 Min. 50 1.1 100 1.1 0.6 0.5 40 25 5 Typ. Max. Unit V V nA pF pF pF S nH Conditions IR=10A IF=50mA VR=50V VR=0V,f=1MHz VR=1V,f...05W Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.10...
Description pin Diodes

File Size 193.34K  /  3 Page

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    BAP64-05W

Micro Commercial Components
Part No. BAP64-05W
OCR Text ...o c) p d 2 0 0 mw junction and storage temperaturet j p stg -65~+150 features lead free finish/rohs compliant ("p" suffix designates rohs compliant. see ordering information) epoxy meets ul 94 v-0 flammabi...
Description General Purpose Pin Diodes 200mW

File Size 467.50K  /  3 Page

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    RFMA1415-0.5W-Q7

Excelics Semiconductor, Inc.
Part No. RFMA1415-0.5W-Q7
OCR Text 0.5W-Q7 UPDATED: 04-24-2008 14.40- 15.40GHz High Gain Surface-Mounted PA FEATURES * * * * * * * 14.40 - 15.40GHz Operating Frequency Range 26.5dBm Output Power @1dB Compression 29.0dB Typical Power Gain @1dB Compression -41dBc OIMD3...
Description 14.40- 15.40GHz High Gain Surface-Mounted PA

File Size 142.04K  /  4 Page

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    RFMA5065-0.5W-Q7

Excelics Semiconductor, Inc.
Part No. RFMA5065-0.5W-Q7
OCR Text 0.5W-Q7 UPDATED: 04/24/2008 5.0 - 6.5 GHz High Gain Surface-Mounted PA FEATURES * * * * * * * 5.0 - 6.5GHz Operating Frequency Range 27.0dBm Output Power @1dB Compression 34.0dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout...
Description 5.0 - 6.5 GHz High Gain Surface-Mounted PA

File Size 121.39K  /  3 Page

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    RFMA5880-0.5W-Q7

Excelics Semiconductor, Inc.
Part No. RFMA5880-0.5W-Q7
OCR Text 0.5W-Q7 UPDATED: 04/24/2008 5.8 - 8.0 GHz High Gain Surface-Mounted PA FEATURES * * * * * * * 5.8 - 8.0GHz Operating Frequency Range 27.0dBm Output Power @1dB Compression 34.0dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout...
Description 5.8 - 8.0 GHz High Gain Surface-Mounted PA

File Size 121.29K  /  3 Page

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