0.30-0.40v pdf Datasheet P3 Full Text Search --- IC-ON-LINE


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0.30-0.40v Datasheet PDF File

For 0.30-0.40v Found Datasheets File :: 10942 Search Time::5.563ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2SB949 2SB949A 2SD1275A 2SD1275
OCR Text	0.70.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm ...30.2 Solder Dip 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 emitter voltage 2SB949A Emitter to...
Description	Silicon PNP epitaxial planar type Darlington
File Size	61.28K / 2 Page	View it Online	Download Datasheet

				PANASONIC CORP PANASONIC[Panasonic Semiconductor]
Part No.	2SB950 2SB950A 2SD1276A 2SD1276
OCR Text	...tary to 2SD1276 and 2SD1276A 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 7.50.2 s Features q q q High foward current ...30.2 Solder Dip 0.5 -0.1 0.80.1 +0.2 2.540.25 5.080.5 1 2 emitter voltage 2SB950A Emi...
Description	Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
File Size	60.93K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB952 2SB952A
OCR Text	...ax. 1.1max. 10.5min. 2.0 0.80.1 0.5max. 2.540.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collect...30 TC=100C -3 25C -1 -25C Collector power dissipation PC (W) 30 Collector current IC (A) ...
Description	Silicon PNP epitaxial planar type(For low-voltage switching)
File Size	57.02K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB953 2SB953A 2SD1444A 2SD1444
OCR Text	...entary to 2SD1444 and 2SD1444A 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage...
Description	Silicon PNP epitaxial planar type(For low-voltage switching)
File Size	54.50K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5026
OCR Text	... 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCE...30 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C Forward current transfer ratio hFE 160 ...
Description	Silicon NPN epitaxial planer type(For low-frequency output amplification)
File Size	36.23K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD958
OCR Text	...omplementary to 2SB788 6.90.1 0.4 Unit: mm 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 1.5 R0.9 R0.9 0.85...30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Ta=75C VCE(sat) -- IC IC/IB=10 Collector power dissi...
Description	Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)
File Size	36.40K / 2 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	AM2729-110 2713
OCR Text	...nction-Case Thermal Resistance* 0.4 C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM2729-110 ELECTRICAL SPE...30 -- -- -- -- -- -- -- -- 30 -- V V V mA -- Value Symbol Test Conditions Min. Typ. Max....
Description	S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS From old datasheet system
File Size	60.77K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1104
OCR Text	... VDSS = 40V G S RDS(on) = 0.009 ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proce...30 VGS = 10V, See Fig. 6 and 13 --- VDD = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. ...
Description	Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
File Size	97.26K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...unction-to-Ambient Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W www.irf.com 1 08/07/02 IRF2204 Electrical Characteris...30 60 90 120 150 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	....) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.) IRF530A BVDSS = 100 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. So...30 45 6 0 10 0 @Nts: oe 1 VGS = 0 V . 2 2 0 s P l e T s .5 us et 08 . 10 . 12 . 14 . 16 . 18 . 20...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

For 0.30-0.40v Found Datasheets File :: 10942 Search Time::5.563ms
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