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  0.60v Datasheet PDF File

For 0.60v Found Datasheets File :: 13270    Search Time::2.907ms    
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    2SB949 2SB949A 2SD1275A 2SD1275

PANASONIC[Panasonic Semiconductor]
Part No. 2SB949 2SB949A 2SD1275A 2SD1275
OCR Text 0.70.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm ...60V, IE = 0 VCB = -80V, IE = 0 VCB = -30V, IB = 0 VCB = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, I...
Description Silicon PNP epitaxial planar type Darlington

File Size 61.28K  /  2 Page

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    2SB950 2SB950A 2SD1276A 2SD1276

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB950 2SB950A 2SD1276A 2SD1276
OCR Text ...tary to 2SD1276 and 2SD1276A 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 7.50.2 s Features q q q High foward current ...60V, IE = 0 VCB = -80V, IE = 0 VCE = -30V, IB = 0 VCE = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, I...
Description Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

File Size 60.93K  /  2 Page

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    2SB951 2SB951A 2SD1277A 2SD1277

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SB951 2SB951A 2SD1277A 2SD1277
OCR Text 0.70.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm 7.50.2 ...60V, IE = 0 VCB = -80V, IE = 0 VEB = -7V, IC = 0 IC = -30mA, IB = 0 VCE = -3V, IC = -4A VCE = -3V, I...
Description Silicon PNP epitaxial planar type Darlington(For midium-speed switching)

File Size 69.42K  /  3 Page

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    2SB954 2SB954A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB954 2SB954A
OCR Text ... s Features q q q Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 ...60V, IB = 0 VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, ...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 45.35K  /  2 Page

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    2SD1063

WINGS[Wing Shing Computer Components]
Part No. 2SD1063
OCR Text ...t) Test Condition IC=5 mA IE=0 IC=10 mA RBE= IE=5mA IC=0 VCB=60V IE=0 VEB=4V IC=0 VCE=2V IC=1A IC=4A IB=0.4A Min 60 50 6 Typ Max Unit V V V mA mA V 70 0.1 0.1 280 0.4 Wing Shing Computer Components Co., (H.K.)Ltd. Ho...
Description NPN PLANAR SILICON TRANSISTOR

File Size 47.31K  /  1 Page

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    2SD1149

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1149
OCR Text 0.2 2.8 -0.3 s Features q q q q 0.650.15 1.5 -0.05 +0.25 0.650.15 +0.2 1.1 -0.1 Parameter Collector to base voltage...60V, IE = 0 VCE = 60V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.00K  /  2 Page

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    2SD389

WS
WINGS[Wing Shing Computer Components]
Part No. 2SD389
OCR Text ...fT Test Condition VCB= 60V , IE=0 VEB= 7V , IC=0 VCE= 3V , IC=1A IC=2A , IB=0.2A VCE= 5V , IC=0.5A Min Typ Max 100 100 70 1.0 18 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(85...
Description LOW FREQUENCY POWER AMPLIFIER(NPN)

File Size 68.25K  /  1 Page

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    HTIP42C HTIP42

HSMC CORP.
HI-SINCERITY MICROELECTRONICS, CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HTIP42C HTIP42
OCR Text ...V V Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V VCE=-60V VEB=-5V IC=-6A, IB=-600mA IC=-6A, VCE=-4V IC=-0.3A, VCE=-4V IC=-3A, VCE=-4V IC=-0.1A, VCE=-5V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz HTIP42C HSM...
Description PNP EPITAXIAL PLANAR TRANSISTOR 进步党外延平面晶体管

File Size 27.00K  /  3 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 50A 28 ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 50A 28 ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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