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  0.8ghz Datasheet PDF File

For 0.8ghz Found Datasheets File :: 978    Search Time::2.797ms    
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    ADL855PC-600C-G5 ADL855PC ADL855PC-140-G5 ADL855PC-373C-G5 ADL855PC-738-G5 ADL855PC-745-G5

Advanced Digital Logic, Inc.
Part No. ADL855PC-600C-G5 ADL855PC ADL855PC-140-G5 ADL855PC-373C-G5 ADL855PC-738-G5 ADL855PC-745-G5
OCR Text 0.6GHz - 1.8GHz Features * * * * * * * * * * * * * Intel(R) Pentium(R) M / Celeron(R) M, 0.6GHz - 1.8GHz Intel(R) 855GME / ICH4, 400MHz FSB Power Management (APM 1.2 plus features) 128MB - 1024MB DDR-SDRAM Direct-X Video Controller CRT/LC...
Description CPU 0.6GHz - 1.8GHz

File Size 411.07K  /  2 Page

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    CLY5 Q62702-L90

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. CLY5 Q62702-L90
OCR Text ...ration current VDS = 3 V VGS = 0 V CLY 5 typ 800 10 5 -2.8 11.0 max 1200 100 20 -1.8 Unit mA A A V dB ______________________________...8GHz 40 26.5 30 55 - dBm dBm % 1dB-Compression Point VDS = 5 V ID = 350 mA Power ...
Description GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system

File Size 86.49K  /  8 Page

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    HDH-12803CHD HDH-12806CID HDH-12810CID HDH-12820CID HDH-02003DHD HDH-09020GID HDH-03010GID HDH-01703CH HDH-09003GHD HDH-

Agilent (Hewlett-Packard)
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
Part No. HDH-12803CHD HDH-12806CID HDH-12810CID HDH-12820CID HDH-02003DHD HDH-09020GID HDH-03010GID HDH-01703CH HDH-09003GHD HDH-02210AI HDH-00803GHD HDH-00810GID HDH-00820GID HDH-00937CI HDH-01503GH HDH-01503GHD HDH-01510GID HDH-01520GID HDH-01530CI HDH-01537CI HDH-01703CHD HDH-01706CID HDH-01710CID HDH-01720CID HDH-01730CID HDH-02220AID HDH-02249AI HDH-03003GHD HDH-03020GID HDH-04003BH HDH-06003GHD HDH-06010GID HDH-06020GID HDH-09006GID HDH-09010GID HDCS-1000 HDCS-1100
OCR Text ...ance Maximum Input Power (Note) 0.5 to 14.5 GHz 50 ohms 2 to 50 W Operating temperature range Operating relative humidity -10c to +65c 95% M...8GHz 6 Form H:H Type 7 D:With Termination sSpecifications Part Number Frequency Range (GH...
Description Integrated CMOS Image Sensor with Digital Output and Timing Controller
Current Monitoring Relay; Contacts:SPDT; Contact Carry Current:10A; Control Voltage:120VAC; Relay Mounting:Plug-In; Mounting Type:Plug-In; Relay Terminals:8-Pin Octal; Terminal Type:8-Pin Octal RoHS Compliant: Yes
Phase Monitoring Relay; Contacts:SPDT; Contact Carry Current:10A; Control Voltage:480V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal
Couplers with Connectors (H Type) 耦合与连接器(H型)
Couplers with Connectors (H Type) 耦合与连接器H型)
   Couplers with Connectors (H Type)

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    ADL855HD ADL855HD-370CM ADL855HD-373CM ADL855HD-745PM

Advanced Digital Logic, Inc.
Part No. ADL855HD ADL855HD-370CM ADL855HD-373CM ADL855HD-745PM
OCR Text ... Mbit Ethernet Ports * 6 x USB2.0 Ports * CRT and 18/24 Bit LVDS/TFT Connections * Mini-PCI Interface * RTC and Watchdog Timer * 5VDC, 5VDC ...8GHz. The Intel(R) 855GME chipset (GMCH) supports a 400MHz FSB with integrated Intel(R) Graphics con...
Description Intel Pentium M / Celeron M 1.0GHz - 1.8GHz

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    BFP196W Q62702-F1576

SIEMENS[Siemens Semiconductor Group]
Part No. BFP196W Q62702-F1576
OCR Text ...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...8GHz VCE = Parameter 12 dB 18 8V 3V G 17 16 15 14 13 8V 3V 2V G 10 2V 9 8 ...
Description From old datasheet system
NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications)
NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

File Size 60.65K  /  7 Page

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    BFP196 Q62702-F1320

SIEMENS[Siemens Semiconductor Group]
Part No. BFP196 Q62702-F1320
OCR Text ...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...8GHz VCE = Parameter 10 10V dB 5V 3V dB G 10V 14 5V 3V 2V 12 G 8 2V 7 6 5 1V 4 10...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

File Size 61.07K  /  7 Page

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    BFR181W Q62702-F1491

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181W Q62702-F1491
OCR Text 0.5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181W RFs Q62702-F1491 1=B 2=E 3=C Package SOT-323 Maxim...
Description NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
From old datasheet system

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    BFR181 Q62702-F1314

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181 Q62702-F1314
OCR Text 0.5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181 RFs Q62702-F1314 1=B 2=E 3=C Package SOT-23 Maximum...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

File Size 57.16K  /  7 Page

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    BFS480 Q62702-F1531

SIEMENS[Siemens Semiconductor Group]
Part No. BFS480 Q62702-F1531
OCR Text ...one) at collector currents from 0.2mA to 8mA * fT = 7GHz F = 1.5dB at 900MHz * Two (galvanic) internal isolated Transistors in one packa...8GHz VCE = Parameter 15 dB dB G 18 8V 2V G 13 12 11 8V 3V 2V 16 1V 14 0.7V 12...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
From old datasheet system

File Size 52.38K  /  6 Page

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For 0.8ghz Found Datasheets File :: 978    Search Time::2.797ms    
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