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Excelics Semiconductor
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Part No. |
EPA080A
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OCR Text |
... vds=3v, ids=2.5ma -1.0 -2.5 v bvgd drain breakdown voltage igd=1.0ma -11 -15 v bvgs source breakdown voltage igs=1.0ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 55 o c/w maximum ratings... |
Description |
8-12V high efficiency heterojunction power FET
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File Size |
29.08K /
2 Page |
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it Online |
Download Datasheet
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EUDYNA[Eudyna Devices Inc]
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Part No. |
FHC40LG
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OCR Text |
...eliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate curre...5 -3.0
Unit V V mW C C
Note
290 -65 to +175 175
ELECTRICAL CHARACTERISTICS (Ambient Temp... |
Description |
Super Low Noise HEMT
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File Size |
82.08K /
5 Page |
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it Online |
Download Datasheet
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Excelics Semiconductor
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Part No. |
EPA160A
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OCR Text |
... vds=3v, ids=4.5ma -1.0 -2.5 v bvgd drain breakdown voltage igd=1.6ma -11 -15 v bvgs source breakdown voltage igs=1.6ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 30 o c/w maximum ratings... |
Description |
8-12V high efficiency heterojunction power FET
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File Size |
27.42K /
2 Page |
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it Online |
Download Datasheet
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Excelics Semiconductor
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Part No. |
EPA060A
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OCR Text |
... vds=3v, ids=2.0ma -1.0 -2.5 v bvgd drain breakdown voltage igd=1.0ma -11 -15 v bvgs source breakdown voltage igs=1.0ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 65 o c/w maximum ratings... |
Description |
8-12V high efficiency heterojunction power FET
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File Size |
28.76K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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