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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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Part No. |
BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC
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OCR Text |
...* Ultra low operation voltage : 1.8 ~ 2.3V * Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current * High speed access time : -70 70ns (Max.... |
Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
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File Size |
212.98K /
12 Page |
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it Online |
Download Datasheet
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BRILLIANCE SEMICONDUCTOR, Inc. BSI[Brilliance Semiconductor]
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Part No. |
BS616LV8012 BS616LV8012BI BS616LV8012BC
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OCR Text |
...ention supply voltage as low as 1.5V * Easy expansion with CE2,CE1 and OE options * I/O Configuration x8/x16 selectable by LB and UB pin
...6uA
30uA 100uA
20mA 25mA
45mA 50mA
BGA-48-0810 BGA-48-0810
PIN CONFIGURATIONS
1 A B ... |
Description |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
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File Size |
204.72K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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