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MICROSEMI POWER PRODUCTS GROUP
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Part No. |
APT8020B2FLLG
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OCR Text |
... 2 (v gs = 10v, i d = 19a) zero gate voltage drain current (v ds = 800v, v gs = 0v) zero gate voltage drain current (v ds = 640v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold ... |
Description |
38 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
245.11K /
5 Page |
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ADVANCED POWER ELECTRONICS CORP
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Part No. |
AP1005BSQ
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OCR Text |
... low profile ( < 0.7mm ) i d 19a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i d @t c =25 a i dm a p d @t a =25 w p d @t a =70 w p d @t c =25 w e as mj i ar a t stg t j rthj-c ... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 19 A, 25 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
122.37K /
4 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AO4202
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OCR Text |
19a r ds(on) (at v gs =10v) < 5.3m w r ds(on) (at v gs = 4.5v) < 7m w symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl 2 t a =70c junction and storage temperature range -55... |
Description |
30V N-Channel MOSFET
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File Size |
485.26K /
6 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STD38NH02L-1
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OCR Text |
...3. starting t j = 25 c, i d = 19a, v dd = 18v single pulse avalanche energy 250 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature table 2. thermal data rthj-case thermal resistance junction-case max 3.75... |
Description |
N-CHANNEL MOSFET
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File Size |
495.64K /
16 Page |
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it Online |
Download Datasheet |
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Price and Availability
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