...s
Max.
-74 -52 -260 3.8 200 1.3 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
...
Description
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条) Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
...screw
Max.
-74 -52 -260 200 1.3 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Sur...
Description
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
...0 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50...
1 8
HEXFET (R) Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in T...0.8W is possible in a typical PCB mount application.
S1 G1 S2 G2
D1 D1 D2 D2
N-Ch VDSS 20V
...
Description
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
..., for 10 seconds
Max.
8.0 5.1 32 125 3.1 1.0 30 5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Typical SMPS Topologies
l l l
Two Transistor Forward Haft Bridge Full Bridge
through are on page 10
Notes
...
...6-32 or M3 screw
Max.
8.0 5.1 32 125 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Typical SMPS Topologies:
l l l
Two Transistor Forward Haft Bridge Full Bridge 1
7/7/99
www.irf...
Description
Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
...y Avalanche Rated
S S S G
1 2
A A D D D D
VDSS = 30V
3
6
4
5
RDS(on) = 0.030
T o p V ie w
Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603
Description
Fifth Generation HEXF...
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET