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1200v 200a Datasheet PDF File

For 1200v 200a Found Datasheets File :: 775 Search Time::1.406ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300DY-24
OCR Text	...ector-emitter voltage ......... 1200v hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80...200a 2 tf IC=100A 1 Tj=25C Tj=125C 0 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 10...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	81.23K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300HA-24B
OCR Text	...ector-emitter voltage ......... 1200v hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E802...200a IC=100A 10 2 7 VCC=600V 5 IB1=0.6A 3 -IB2=6.0A 2 10 1 7 5 3 2 3 2 SWITCHING TIME ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	72.24K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	QM300HA-24
OCR Text	...ector-emitter voltage ......... 1200v hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80...200a ton, ts, tf (s) IC=100A tf 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 ...
Description	300 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR HIGH POWER SWITCHING USE INSULATED TYPE
File Size	76.58K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300HA-2HB
OCR Text	...ector-emitter voltage ......... 1200v hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E802...200a 10 2 7 VCC=600V 5 IB1=0.6A 3 -IB2=6.0A 2 10 1 7 5 3 2 3 2 IC=100A SWITCHING TIME...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	72.15K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IHW20T120
OCR Text	...timisation of inverse diode VCE 1200v IC 20A VCE(sat),Tj=25C 1.7V Tj,max 150C C G E * * * Type IHW20T120 Marking H20T120 ...200a IC(sc), short circuit COLLECTOR CURRENT SHORT CIRCUIT WITHSTAND TIME 15s 175A 150A ...
Description	IGBTs & DuoPacks - 20A / 1200v IGBT and 9A / 1200v Diode in DuoPack Soft Switching Series
File Size	316.12K / 14 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M57958L
OCR Text	...eries (up to 400A Class) VCES = 1200v Series (up to 200a Class) VCES = 1400V Series (up to 200a Class) 15.5 MAX Test Circuit VIN VIN M57958L MEASUREMENT POINT 6 47F Cext = 47F TTL, etc. VCC VEE = 15V = 10V tPLH tPHL 7 8 VOUT tr tf 90...
Description	HYBRID IC FOR DRIVING IGBT MODULES
File Size	31.03K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	CM200DY-24 CM200DY-24H
OCR Text	...le below -i.e. CM200DY-24H is a 1200v (VCES), 200 Ampere Dual IGBT Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 24 M ...200a, VGE = 15V IC = 200a, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 60...
Description	IGBT Modules:1200v HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.09K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FGA25N120ANTD
OCR Text	1200v NPT Trench IGBT August 2005 FGA25N120ANTD 1200v NPT Trench IGBT Features * NPT Trench Technology, Positive temperature coeffi...200a/s 20 TJ = 125C 15 di/dt = 100A/s 10 1 T J = 25C T C = 125C 0.1 0.0 0.4 0.8 1....
Description	1200v NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology 1200v NPT Trench IGBT
File Size	863.48K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4PH40UD IRG4PH40UD-E
OCR Text	...UltraFast CoPack IGBT VCES = 1200v G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-ch an nel Benefits * Higher switching freq...200a/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH40UD 25 For both: ...
Description	41 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条） INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200v UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
File Size	217.13K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM200DSA120
OCR Text	...le below -i.e. PM200DSA120 is a 1200v, 200 Ampere Intelligent Power Module. Type PM Current Rating Amperes 200 VCES Volts (x 10) 120 1.1...200a, VD = 15V, VCIN = 5V VD = 15V, VCIN = 0V, IC = 200a VD = 15V, VCIN = 0V, IC = 200a, Tj = 125C I...
Description	FLAT-BASE TYPE INSULATED PACKAGE
File Size	62.86K / 6 Page	View it Online	Download Datasheet

For 1200v 200a Found Datasheets File :: 775 Search Time::1.406ms
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