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W12NA60 7805C 90ECB L6564 C100L 2J103J 2SC6011A 2N1136A
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  13.5m Datasheet PDF File

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...0V 43 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in....5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ... FOR TEST CIRCUIT SEE FIGURE 13 40 60 80 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitanc...5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC O...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...0V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF ...5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...0V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF ...5M, 1982. 2 CO NT RO LLING D IMEN S ION : IN CH 2.92 (.115) 2.64 (.104) 3 OUT LINE C ONF O RMS...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... 5.1 28 3.1 125 1.0 30 510 8.0 13 3.5 -55 to + 150 300 (1.6mm from case) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parame...5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O ...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ... 3.1 --- 62 Units C/W 5/13/98 IRF9520N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ...5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...--- --- --- 6.9 1.0 1.8 6.2 8.8 13 3.0 190 120 61 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.10...5M- 1982. 2. C O NT RO LLING D IME NS IO N : IN CH. 3. D IME NS IO NS A RE S HO W N IN M ILLIME T ER...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ... 5.1 VGS = -10V, See Fig. 6 and 13 --- VDD = -30V --- I D = -6.7A ns --- RG = 24 --- RD = 4.0, See Fig. 10 Between lead, nH 7.5 --- and ce...5M, 1982. 3 CO NT RO LLING DIME NSIO N : INCH. 4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURR...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ... 11 V GS = -10V, See Fig. 6 and 13 13 --- VDD = -30V 68 --- ID = -11A ns 15 --- RG = 18 29 --- RD = 2.5, See Fig. 10 Between lead, nH 7.5 ...5M, 1982. 3 CO NT RO LLING DIME NSIO N : INCH. 4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURR...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...e, for 10 seconds Max. -18 -13 -72 3.7 88 0.59 20 370 -18 8.8 -4.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/...5M, 1982. 3 CO NT RO LLING DIME NSIO N : INCH. 4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURR...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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For 13.5m Found Datasheets File :: 13567    Search Time::1.844ms    
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