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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS15N120HB
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| Description |
SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW015N120C
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| Description |
N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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IXYS, Corp.
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| Part No. |
IXGA15N120C
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| Description |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-263AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 30A条一（c）|63AA
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| File Size |
138.19K /
2 Page |
 View
it Online |
Download Datasheet
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Infineon Technologies A...
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| Part No. |
IKW15N120T2
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| Description |
IGBT in 2nd generation TrenchStop? technology with soft, fast recovery anti-parallel Emitter Controlled Diode
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| File Size |
452.26K /
15 Page |
View
it Online |
Download Datasheet |
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Bom2Buy.com
Price and Availability
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JITONG
TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor |
| Part: 15N60 |
| Maker: N/A |
| Pack: N/A |
| Stock: 113 |
| Unit price
for : |
|
50: $1.18 |
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100: $1.12 |
| 1000:
$1.06 |
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